Correction for Wu et al., Large enhancement of thermoelectric performance in MoS₂/h-BN heterostructure due to vacancy-induced band hybridization

APPLIED PHYSICAL SCIENCES Correction for “Large enhancement of thermoelectric performance in MoS₂/h-BN heterostructure due to vacancy-induced band hybridization,” by Jing Wu, Yanpeng Liu, Yi Liu, Yongqing Cai, Yunshan Zhao, Hong Kuan Ng, Kenji Watanabe, Takashi Taniguchi, Gang Zhang, Cheng-Wei Qiu, Dongzhi Chi, A. H. Castro Neto, John T. L. Thong, Kian Ping Loh, and Kedar Hippalgaonkar, which was first published June 10, 2020; 10.1073/pnas.2007495117 (Proc. Natl. Acad. Sci. U.S.A. 117, 13929–13936).

The authors note that one of the three affiliations listed for Kian Ping Loh was incorrect. This author does not have an affiliation with Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore. Instead, this author should have been shown as having a third affiliation at Shenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, 518060, China. The corrected author and affiliation lines appear below. The online version has been corrected.

Jing Wu^a,b, Yanpeng Liu^b,c,d, Yi Liu^b,e, Yongqing Cai^f, Yunshan Zhao^b,e,g, Hong Kuan Ng^a,h, Kenji Watanabe (渡邊賢司)ⁱ, Takashi Taniguchiⁱ, Gang Zhang^j, Cheng-Wei Qiu^b,e,k, Dongzhi Chi^a, A. H. Castro Neto^b,h, John T. L. Thong^b,e, Kian Ping Loh^b,c,k, and Kedar Hippalgaonkar^a,b,l

^aInstitute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore; ^bCentre for Advanced 2D Materials, National University of Singapore, 117546, Singapore; ^cDepartment of Chemistry, National University of Singapore, 117542, Singapore; ^dKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; ^eDepartment of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore; ^fJoint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China; ^gSchool of Physics and Technology, Nanjing Normal University, Nanjing 210023, China; ^hDepartment of Physics, National University of Singapore, 117542, Singapore; ⁱAdvanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan; ^jInstitute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore; ^kShenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, 518060, China; and ^lDepartment of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore