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Acta Crystallographica Section E: Crystallographic Communications logoLink to Acta Crystallographica Section E: Crystallographic Communications
. 2020 Oct 6;76(Pt 11):1708–1711. doi: 10.1107/S2056989020013158

Lu-atom-ordered oxonitridoaluminosilicate Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1

Rayko Simura a,*, Hisanori Yamane a
PMCID: PMC7643228  PMID: 33209337

A single crystal of Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 (barium cerium lutetium aluminosilicate nitride oxide) was obtained by heating a mixed powder of Ba3N2, Si3N4, Al, Lu2O3, and CeO2 at 2173 K for 1 h under N2 gas at 0.85 MPa. X-ray single-crystal structure analysis revealed that the title oxynitride is hexa­gonal and isostructural with BaYbSi4N7. (Ba,Ce) and Lu atoms occupy twelvefold and sixfold coordination sites, respectively.

Keywords: BaLuSi4N7, crystal structure; oxynitride

Abstract

A single crystal of Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 (barium cerium lutetium aluminosilicate nitride oxide) was obtained by heating a mixed powder of Ba3N2, Si3N4, Al, Lu2O3, and CeO2 at 2173 K for 1 h under N2 gas at 0.85 MPa. X-ray single-crystal structure analysis revealed that the title oxynitride is hexa­gonal (lattice constants: a = 6.0378 (5) Å, c = 9.8133 (9) Å; space group: P63 mc) and isostructural with BaYbSi4N7. (Ba,Ce) and Lu atoms occupy twelvefold and sixfold coordination sites, respectively.

Chemical context  

Huppertz & Schnick (1997b ) determined the hexa­gonal crystal structures of two isotypic nitrides, SrYbSi4N7 [a = 5.9880 (3) Å, c = 9.7499 (9) Å] and BaYbSi4N7 [a = 6.0307 (2) Å, c = 9.8198 (4) Å] with space group P63 mc (Z = 2), by single-crystal X-ray diffraction (XRD). In the crystal structure of BaYbSi4N7, the Ba, Yb, and Si atoms are coord­inated by twelve, six, and four N atoms of an anti­cubocta­hedron, octa­hedron, and a tetra­hedron, respectively. A three-dimensional framework of SiN4 tetra­hedra is formed by sharing vertex N atoms, and the inter­spaces of the framework are occupied by Ba and Yb atoms. N atoms at the N1 and N2 sites bond to two Si atoms, and N atoms at the N3 site are surrounded by four Si atoms. Such a high coordination number for the N3 site is characteristic of the crystal structures of SrYbSi4N7 and BaYbSi4N7 (Huppertz & Schnick, 1997b ).

Other nitrides having the same structure type have been synthesized by substitution of Ca and/or other rare-earth (R) atoms for Sr, Ba, and Yb atoms. The crystal structure of SrYSi4N7 (a = 6.0160 (1) Å, c = 9.7894 (1) Å) was clarified by powder X-ray diffraction (pXRD) (Li, Fang, et al., 2004). Some nitrides doped with Eu2+, such as Ba0.99Eu0.01YSi4N7 [a = 6.0275 (6) Å, c = 9.880 (1) Å], Sr0.99Eu0.01YSi4N7 [a = 6.0269 (7) Å, c = 9.878 (1)] , and Ca0.99Eu0.01YSi4N7 [a = 5.9866 (5) Å, c = 9.800 (1) Å] (Li, Fang, et al., 2004; Porob et al., 2012), have also been reported. Oxynitrides SrR(Si,Al)4(N,O)7 and BaR(Si,Al)4(N,O)7 (R = Ho, Er, Tm, Yb; Lieb et al., 2007), in which the Si and N atoms are partly replaced by Al and O atoms, have also been synthesized. The crystal structures of the aforementioned compounds were found to be isotypic with SrYbSi4N7 and BaYbSi4N7. The alkaline-earth (A) atoms of Ca, Sr, or Ba are ordered at the anti­cubocta­hedral (a) site of twelvefold coordination of N or O atoms, and the R atoms are located at the octa­hedral (o) site of sixfold coordination of N or O atoms. However, the crystal structures of BaLuSi4N7 [a = 6.02185 (2) Å, c = 9.81219 (7) Å] and SrLuSi4N7 [a = 6.02113 (2) Å, c = 9.80105 (7) Å] were analyzed by the Rietveld method for pXRD patterns using a disordered model in which both Ba/Sr and Lu atoms were statistically located at the a and o sites with the same occupancy of 0.5 (Park et al., 2012).

During our materials survey of novel Ce-doped phosphors in the Ba–Lu–Si–N system, small numbers of needle-like single crystals of 10 μm in diameter and 60 μm in length (at maximum) were grown at the contact surface between the BN crucible and an aggregate of fine particles consisting of amorphous and crystalline materials. The powder XRD pattern of the crystalline materials were indexed by the similar lattice constants as that of the needle-like crystals. Electron-probe microanalysis (EPMA) performed at 12 points on one of the needle-like single crystals gave a composition of Ce:Ba:Lu:Si:Al:N:O = 0.8 (2):7.6 (5):7.6 (6):29.6 (20):1.6 (4):49 (3):4(1) in weight percent (total mass was normalized to 100 mass%). The lower precision of the N and O contents was due to the lower energy of the characteristic X-rays of these light elements. The molar ratio obtained from the composition was Ce:Ba:Lu:Si:Al:N:O = 0.1 (3):0.99 (7):0.99 (8):3.9 (3):0.21 (5):6.4 (4):0.5 (2) (total sum 13), and the composition of the single crystal was regarded to be Ce0.1Ba0.9Lu1.0Si3.8Al0.2N6.9O0.1 by assuming Ce atoms situated at the a site with Ba atoms. The XRD spots from the crystal were indexed with hexa­gonal lattice constants of a = 6.0378 (5) Å and c = 9.8133 (9) Å (Table 1), which were approximately the same as those reported for BaLuSi4N7 (Park et al., 2012) within differences of 0.1 and 0.2%, respectively. Initially, a structure refinement of Ce0.1Ba0.9Lu1.0Si3.8Al0.2N6.9O0.1 was carried out with a disordered model of (Ce0.1Ba0.4Lu0.5)(Ba0.5Lu0.5)Al0.05Si0.95)4(N0.99O0.01)7, in which the Ce, Ba, and Lu atoms were at the a site with a ratio of 0.1:0.4:0.5 and Ba and Lu atoms were at the o site with a 0.5:0.5 ratio, in accordance with the structure model of BaLuSi4N7 (Park et al., 2012). The R value of refinement was 4.2%, and residual electron densities of 5.52 and −3.46 e Å−3 were observed at 0.89 and 1.67 Å, respectively, from the a site and the N/O site (Table 2). Refinement using the ordered model of (Ce0.1Ba0.9)(Lu)(Al0.05Si0.95)4(N0.99O0.01)7, in which the Ba and Ce atoms are at the a site with a ratio of 0.9:0.1 and Lu atoms fully occupy the o site, yielded an R value of 2.2% with residual electron densities of 1.70 and −1.40 e Å−3 (Table1). As a consequence, the Ba and Lu atoms in Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 were clarified to be ordered at the a and o sites, respectively (Fig. 1).

Table 1. Experimental details.

Crystal data
Chemical formula Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1
M r 1045.99
Crystal system, space group Hexagonal, P63 m c
Temperature (K) 301
a, c (Å) 6.0378 (5), 9.8133 (9)
V3) 309.82 (6)
Z 1
Radiation type Mo Kα
μ (mm−1) 22.95
Crystal size (μm) 0.13 × 0.07 × 0.02
 
Data collection
Diffractometer Bruker D8 QUEST
Absorption correction Multi-scan (SADABS; Bruker, 2018)
T min, T max 0.37, 0.68
No. of measured, independent and observed [I > 2σ(I)] reflections 2818, 395, 381
R int 0.059
(sin θ/λ)max−1) 0.713
 
Refinement
R[F 2 > 2σ(F 2)], wR(F 2), S 0.022, 0.055, 1.04
No. of reflections 395
No. of parameters 33
No. of restraints 1
Δρmax, Δρmin (e Å−3) 1.70, −1.40
Absolute structure Refined as an inversion twin
Absolute structure parameter 0.10 (3)

Computer programs: Instrument Service (Bruker, 2018), APEX3 (Bruker, 2018), SAINT (Bruker, 2018), SHELXT2014/5 (Sheldrick, 2015a ), SHELXL2014/7 (Sheldrick, 2015b ), VESTA (Momma & Izumi, 2011), pubCIF (Westrip, 2010).

Table 2. Disordered model (Ce0.1Ba0.4Lu0.5)(Ba0.5Lu0.5) (Al0.05Si0.95)4 (N0.99O0.01)7 .

Refinement  
R[F 2 > 2σ(F 2)], wR(F 2), S 0.042, 0.115, 1.32
No. of reflections 395
No. of parameters 39
No. of restraints 1
Δρmax, Δρmin (e Å−3) 5.52, −3.46
Absolute structure Refined as an inversion twin
Absolute structure parameter 0.12 (9)

Figure 1.

Figure 1

(a) Arrangement of cation-centered N/O atoms and (b) the crystal structure illustrated with cation-centered N/O-coordinated polyhedra for Ba0.90Ce0.10LuSi3.80Al0.20N6.90O0.10. Symmetry codes: (i) x, y, z; (ii) x − 1, y, z; (iii) x, y + 1, z; (iv) −y, x − y, z); (v) −y, x − y − 1, z; (vi) −x, −y, z + Inline graphic); (vii) −y + 1, x − y, z); (viii) −x + y + 1, −x + 1, z; (ix) y, −x + y, z + Inline graphic; (x) x − y + 1, x, z + Inline graphic; (xi) −x + 1, −y + 1, z + Inline graphic; (xii) y, −x + y + 1, z + Inline graphic; (xiii) x − y, x, z + Inline graphic; (xiv) −x + y + 1, −x + 2, z; (xv) −y + 1, x − y + 1, z.

Structural commentary  

The inter­atomic distances of Ba/Ce—N/O for Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 are 2.975 (10) Å × 3, 3.0236 (5) Å × 4, 3.0236 (5) Å × 2, and 3.052 (10) Å × 3, which are comparable with the Ba/Lu—N distances for the a site of BaLuSi4N7 (2.975 Å × 3, 3.0372 Å × 3, 3.038 Å × 3, 3.0783 Å × 3) reported by Park et al. (2012). Lu—N/O distances in the title compound are 2.271 (10) Å × 3 and 2.312 (9) Å × 3, which are 0.139 Å shorter than the Ba/Lu—N distances (2.414 Å × 3, 2.451 Å × 3) for the o site of BaLuSi4N7.

The Al/Si1—N/O distances are 1.701 (9) Å × 3 and 1.85 (2) Å, and the Al/Si2—N/O distances are 1.738 (9) Å, 1.743 (6) Å × 2, and 1.954 (7) Å. These distances are consistent with those of Si—N (1.705 Å × 3, 1.887 Å and 1.724 Å, 1.721 Å × 2, 1.962 Å) for BaYbSi4N7 (Huppertz & Schnick, 1997b ) but 0.07–0.2 Å longer than those of Si1–N (1.478 Å × 3, 1.776 Å) and Si2—N (1.671, 1.673, 1.889, 1.937 Å) reported for BaLuSi4N7 by Park et al. (2012), although the lattice constants of Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 and BaLuSi4N7 are similar, as previously mentioned. The average distances of Al/Si2—N/O and Si2—O of 1.792 and 1.782 Å, respectively, are slightly longer than those of Al/Si1—N/O (1.741 Å) and Si1—N (1.750 Å). The IVSi4+IVN3− and IVAl3+IVN3− distances calculated with the effective ionic radius for nitrides (IVSi4+ = 0.29, IVAl3+ = 0.41 Å, IVN3− = 1.46 Å; Baur, 1987) are 1.75 and 1.87 Å, respectively, which are similar to the Si—N and Al/Si—N/O distances of BaYbSi4N7 and Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1. The bond-valence sum (BVS) (Brown & Altermatt, 1985) for the Lu site of Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 was calculated to be 3.07 with a bond-valence parameter of Lu—N (r 0 = 2.046, b = 0.37) reported by Brese & O’Keeffe (1991), in good agreement with the valence of Lu3+. The BVS with a parameter of Ba—N [r 0 = 2.47; Brese and O’Keeffe (1991)] is 2.73, which is greater than the valence of Ba2+. The BVSs of Al/Si1 and Al/Si2 with the parameter of Si–N (r 0 = 1.77, b = 0.37) are 4.39 and 3.87, respectively.

Database survey  

The Inorganic Crystal Structure Database (ICSD) includes some records of BaYbSi4N7-type nitrides and oxynitrides that include alkaline-earth and rare-earth elements: BaYbSi4N7 and SrYbSi4N7 by Huppertz & Schnick (1997b ) and SrYSi4N7 by Li, Fang et al. (2004). EuYbSi4N7 and EuYSi4N7 (Huppertz & Schnick, 1997a ; Li, Fang et al., 2004) are isostructural with BaYbSi4N7 but do not include an alkaline-earth metal element.

Oxynitrides in which Si and N atoms were partly replaced with Al and O atoms, respectively, have also been reported: BaYb(Si,Al)4(O,N)7 (Vinograd et al., 2007), BaEr(Si,Al)4(O,N)7, BaHo(Si,Al)4(O,N)7, BaTm(Si,Al)4(O,N)7, BaYb(Si,Al)4(O,N)7, SrEr(Si,Al)4(O,N)7, SrHo(Si,Al)4(O,N)7, SrTm(Si,Al)4(O,N)7, SrYb(Si,Al)4(O,N)7, EuEr(Si,Al)4(O,N)7, EuHo(Si,Al)4(O,N)7, EuTm(Si,Al)4(O,N)7, and EuYb(Si,Al)4(O,N)7 (Lieb et al., 2007).

First-principles calculations of the electronic structures of SrYSi4N7 and BaYSi4N7 have been reported (Fang et al., 2003). Moreover, numerous researchers have investigated the luminescence of oxynitrides and nitrides doped with Ce and Eu, including Ce3+-BaYSi4N7, Eu2+-BaYSi4N7 (Li, deWith et al., 2004), Ce3+-SrYSi4N7, Eu2+-SrYSi4N7 (Li, Fang et al., 2004), Eu2+-(Ca,Sr, or Ba)YSi4N7, Eu2+-(Ca,Sr, or Ba)Y(Si,Al)4(N,O)7 (Kurushima et al., 2010), Eu2+-(Ca, Sr, or Ba)(Sc, Y, or La)Si4N7 (Horikawa et al., 2012), Eu2+-(Ca,Sr, or Ba)Y(Y, La, or Lu)Si4N7 (Park et al., 2012), and Eu2+-SrScSi4(N,O)7 (Porob et al., 2012).

Synthesis and crystallization  

Powdered Si3N4 (Ube Industries Ltd., UBE-SN-E10, 95+%), Ba3N2 (Materion Corp., ∼20 mesh 99.7%), Al (Rare Metallic, ∼200 mesh, 99.9%), Lu2O3 (Nippon Yttrium Co. Ltd., 99.999%), CeO2 (Shin-Etsu Chemical Co. Ltd., 99.99%) were weighed out in an Si:Ba:Lu:Al:Ce molar ratio of 3.25:1:1:0.25:0.04 in an Ar-filled glove box (MBRAUN; [O2] and [H2O] < 1 ppm). The weighed powders were mixed in an agate mortar, and a disk-shaped pellet with a diameter of 10 mm was formed with a die in an Ar gas-filled glove box. The pellet was placed in a BN crucible (Showa Denko, K. K., 99.5%) with an 18 mm inner diameter and 20 mm height, and a BN lid was placed on it. The BN crucible was heated to 1200°C for 1 h under vacuum using a carbon furnace (VESTA, Shimadzu Industrial Systems Co., Ltd.), and the temperature was maintained at 1200 °C for 1 h. N2 gas (Taiyo Nippon Sanso Corp., 99.9995+%) was introduced into the furnace to a pressure of 0.85 MPa, and the furnace was then heated to 1900°C for 25 min. After the temperature and the N2 gas pressure were maintained for 1 h, the sample was cooled to 1200°C for 25 min. The heater power was then cut off. After the furnace reached room temperature, the crucible was removed from the furnace. The chemical composition of the single crystal was analyzed by EPMA (JEOL JXA-8200).

Refinement  

Crystal data and the data collection details are summarized in Table 1, and the structural refinement details are reported in Table 2. Ordered and disordered models were investigated, and the best result was obtained using an ordered model in which the Ce/Ba mixed site and Lu site are located at the a site and o site, respectively. Because the R and S values were not affected by refinement with ordered models of Al and Si atoms and N and O atoms, the occupancies of the Al/Si and N/O sites were fixed at 0.05/0.95 and 0.99/0.01, respectively. Final refinement was carried out with anisotropic displacement parameters.

Supplementary Material

Crystal structure: contains datablock(s) I. DOI: 10.1107/S2056989020013158/ru2072sup1.cif

e-76-01708-sup1.cif (152.4KB, cif)

Structure factors: contains datablock(s) I. DOI: 10.1107/S2056989020013158/ru2072Isup2.hkl

e-76-01708-Isup2.hkl (34.4KB, hkl)

CCDC reference: 2034534

Additional supporting information: crystallographic information; 3D view; checkCIF report

Acknowledgments

We thank Ms Y. Suzuki for preparing the sample and Mr T. Kamaya for the EPMA measurement. This work is supported by the joint research budget between Tohoku University and the Mitsubishi Chemical Corporation (J190002825).

supplementary crystallographic information

Crystal data

Ba0.9Ce0.1LuAl0.2Si3.8N6.9O0.1 Dx = 5.606 Mg m3
Mr = 1045.99 Mo Kα radiation, λ = 0.71073 Å
Hexagonal, P63mc Cell parameters from 127 reflections
a = 6.0378 (5) Å θ = 4.2–30.8°
c = 9.8133 (9) Å µ = 22.95 mm1
V = 309.82 (6) Å3 T = 301 K
Z = 1 Block, colorless
F(000) = 464 0.13 × 0.07 × 0.02 mm

Data collection

Bruker D8 QUEST diffractometer 381 reflections with I > 2σ(I)
Detector resolution: 7.3910 pixels mm-1 Rint = 0.059
ω and σcans θmax = 30.5°, θmin = 3.9°
Absorption correction: multi-scan (SADABS; Bruker, 2018) h = −7→8
Tmin = 0.37, Tmax = 0.68 k = −8→8
2818 measured reflections l = −14→14
395 independent reflections

Refinement

Refinement on F2 w = 1/[σ2(Fo2) + (0.0313P)2 + 0.7267P] where P = (Fo2 + 2Fc2)/3
Least-squares matrix: full (Δ/σ)max < 0.001
R[F2 > 2σ(F2)] = 0.022 Δρmax = 1.70 e Å3
wR(F2) = 0.055 Δρmin = −1.40 e Å3
S = 1.04 Extinction correction: SHELXL-2014/7 (Sheldrick 2015b), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
395 reflections Extinction coefficient: 0.0052 (16)
33 parameters Absolute structure: Refined as an inversion twin.
1 restraint Absolute structure parameter: 0.10 (3)

Special details

Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refined as a two-component inversion twin

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)

x y z Uiso*/Ueq Occ. (<1)
Lu1 0.3333 0.6667 0.07616 (4) 0.0074 (2)
Ba2 0.3333 0.6667 0.44902 (10) 0.0099 (3) 0.9
Ce2 0.3333 0.6667 0.44902 (10) 0.0099 (3) 0.1
Si1 0.8275 (2) 0.1725 (2) 0.2646 (5) 0.0084 (5) 0.95
Al1 0.8275 (2) 0.1725 (2) 0.2646 (5) 0.0084 (5) 0.05
Si2 0.0000 0.0000 0.0006 (7) 0.0071 (9) 0.95
Al2 0.0000 0.0000 0.0006 (7) 0.0071 (9) 0.05
N1 0.5097 (8) 0.4903 (8) 0.2112 (11) 0.0087 (14) 0.9857
O1 0.5097 (8) 0.4903 (8) 0.2112 (11) 0.0087 (14) 0.0143
N2 0.8474 (8) 0.1526 (8) 0.4404 (9) 0.0123 (19) 0.9857
O2 0.8474 (8) 0.1526 (8) 0.4404 (9) 0.0123 (19) 0.0143
N3 0.0000 0.0000 0.1880 (18) 0.016 (3) 0.9857
O3 0.0000 0.0000 0.1880 (18) 0.016 (3) 0.0143

Atomic displacement parameters (Å2)

U11 U22 U33 U12 U13 U23
Lu1 0.0075 (3) 0.0075 (3) 0.0072 (4) 0.00374 (13) 0.000 0.000
Ba2 0.0098 (4) 0.0098 (4) 0.0101 (6) 0.00489 (18) 0.000 0.000
Ce2 0.0098 (4) 0.0098 (4) 0.0101 (6) 0.00489 (18) 0.000 0.000
Si1 0.0076 (8) 0.0076 (8) 0.0097 (10) 0.0035 (9) −0.0002 (6) 0.0002 (6)
Al1 0.0076 (8) 0.0076 (8) 0.0097 (10) 0.0035 (9) −0.0002 (6) 0.0002 (6)
Si2 0.0061 (10) 0.0061 (10) 0.009 (3) 0.0031 (5) 0.000 0.000
Al2 0.0061 (10) 0.0061 (10) 0.009 (3) 0.0031 (5) 0.000 0.000
N1 0.007 (2) 0.007 (2) 0.010 (3) 0.002 (2) 0.0010 (16) −0.0010 (16)
O1 0.007 (2) 0.007 (2) 0.010 (3) 0.002 (2) 0.0010 (16) −0.0010 (16)
N2 0.015 (3) 0.015 (3) 0.011 (5) 0.011 (4) 0.0010 (14) −0.0010 (14)
O2 0.015 (3) 0.015 (3) 0.011 (5) 0.011 (4) 0.0010 (14) −0.0010 (14)
N3 0.018 (5) 0.018 (5) 0.013 (8) 0.009 (3) 0.000 0.000
O3 0.018 (5) 0.018 (5) 0.013 (8) 0.009 (3) 0.000 0.000

Geometric parameters (Å, º)

Lu1—O1i 2.271 (10) Si1—Ba2ix 3.521 (2)
Lu1—N1i 2.271 (10) Si1—Ba2x 3.521 (2)
Lu1—O1ii 2.271 (10) Si2—O2xi 1.701 (9)
Lu1—N1ii 2.271 (10) Si2—N2xi 1.701 (9)
Lu1—N1 2.271 (10) Si2—O2iv 1.701 (9)
Lu1—O2iii 2.312 (9) Si2—N2iv 1.701 (9)
Lu1—N2iii 2.312 (9) Si2—O2xii 1.701 (9)
Lu1—O2iv 2.312 (9) Si2—N2xii 1.701 (9)
Lu1—N2iv 2.312 (9) Si2—N3 1.839 (19)
Lu1—O2v 2.312 (9) Si2—Ba2xiii 3.5225 (11)
Lu1—N2v 2.312 (9) Si2—Ba2xiv 3.5225 (11)
Ba2—N1 2.975 (10) Si2—Ba2v 3.5226 (11)
Ba2—O1ii 2.975 (10) N1—Al1vii 1.743 (6)
Ba2—N1ii 2.975 (10) N1—Si1vii 1.743 (6)
Ba2—O1i 2.975 (10) N1—Al1vi 1.743 (6)
Ba2—N1i 2.975 (10) N1—Si1vi 1.743 (6)
Ba2—O2vi 3.0236 (5) N1—Ba2xiv 3.052 (10)
Ba2—N2vi 3.0236 (5) N2—Al2xv 1.701 (9)
Ba2—O2vii 3.0236 (5) N2—Si2xv 1.701 (9)
Ba2—N2vii 3.0236 (5) N2—Lu1xv 2.313 (9)
Ba2—O2viii 3.0237 (6) N2—Ba2ix 3.0237 (6)
Ba2—N2viii 3.0237 (6) N2—Ce2ix 3.0237 (6)
Si1—N2 1.738 (9) N2—Ce2x 3.0237 (6)
Si1—O1vi 1.743 (6) N2—Ba2x 3.0237 (6)
Si1—N1vi 1.743 (6) N3—Al1vi 1.954 (7)
Si1—O1vii 1.743 (6) N3—Si1vi 1.954 (7)
Si1—N1vii 1.743 (6) N3—Al1xvi 1.954 (7)
Si1—O3ix 1.954 (7) N3—Si1xvi 1.954 (7)
Si1—N3ix 1.954 (7) N3—Si1viii 1.954 (7)
Si1—Al1vii 2.914 (4) N3—Al1viii 1.954 (7)
Si1—Al1vi 2.914 (4)
O1i—Lu1—N1i 0.0 N1vi—Si1—Al1vi 88.8 (2)
O1i—Lu1—O1ii 89.4 (3) O1vii—Si1—Al1vi 33.3 (3)
N1i—Lu1—O1ii 89.4 (3) N1vii—Si1—Al1vi 33.3 (3)
O1i—Lu1—N1ii 89.4 O3ix—Si1—Al1vi 143.1 (3)
N1i—Lu1—N1ii 89.4 (3) N3ix—Si1—Al1vi 143.1 (3)
O1ii—Lu1—N1ii 0.0 Al1vii—Si1—Al1vi 60.0
O1i—Lu1—N1 89.4 N2—Si1—Ba2ix 59.17 (6)
N1i—Lu1—N1 89.4 (3) O1vi—Si1—Ba2ix 57.6 (3)
O1ii—Lu1—N1 89.4 N1vi—Si1—Ba2ix 57.6 (3)
N1ii—Lu1—N1 89.4 (3) O1vii—Si1—Ba2ix 149.6 (3)
O1i—Lu1—O2iii 90.2 (2) N1vii—Si1—Ba2ix 149.6 (3)
N1i—Lu1—O2iii 90.2 (2) O3ix—Si1—Ba2ix 100.5 (2)
O1ii—Lu1—O2iii 90.2 (2) N3ix—Si1—Ba2ix 100.5 (2)
N1ii—Lu1—O2iii 90.2 (2) Al1vii—Si1—Ba2ix 65.56 (4)
N1—Lu1—O2iii 179.5 (3) Al1vi—Si1—Ba2ix 116.34 (4)
O1i—Lu1—N2iii 90.2 (2) N2—Si1—Ba2x 59.17 (6)
N1i—Lu1—N2iii 90.2 (2) O1vi—Si1—Ba2x 149.6 (3)
O1ii—Lu1—N2iii 90.2 (2) N1vi—Si1—Ba2x 149.6 (3)
N1ii—Lu1—N2iii 90.2 (2) O1vii—Si1—Ba2x 57.6 (3)
N1—Lu1—N2iii 179.5 (3) N1vii—Si1—Ba2x 57.6 (3)
O2iii—Lu1—N2iii 0.0 O3ix—Si1—Ba2x 100.5 (2)
O1i—Lu1—O2iv 179.5 (3) N3ix—Si1—Ba2x 100.5 (2)
N1i—Lu1—O2iv 179.5 (3) Al1vii—Si1—Ba2x 116.34 (4)
O1ii—Lu1—O2iv 90.2 (2) Al1vi—Si1—Ba2x 65.56 (4)
N1ii—Lu1—O2iv 90.2 (2) Ba2ix—Si1—Ba2x 118.08 (12)
N1—Lu1—O2iv 90.2 (2) O2xi—Si2—N2xi 0.0
O2iii—Lu1—O2iv 90.1 (3) O2xi—Si2—O2iv 108.6 (4)
N2iii—Lu1—O2iv 90.1 (3) N2xi—Si2—O2iv 108.6 (4)
O1i—Lu1—N2iv 179.5 (3) O2xi—Si2—N2iv 108.6
N1i—Lu1—N2iv 179.5 (3) N2xi—Si2—N2iv 108.6 (4)
O1ii—Lu1—N2iv 90.2 (2) O2iv—Si2—N2iv 0.0
N1ii—Lu1—N2iv 90.2 (2) O2xi—Si2—O2xii 108.6 (4)
N1—Lu1—N2iv 90.2 (2) N2xi—Si2—O2xii 108.6 (4)
O2iii—Lu1—N2iv 90.1 O2iv—Si2—O2xii 108.6 (4)
N2iii—Lu1—N2iv 90.1 (3) N2iv—Si2—O2xii 108.6 (4)
O2iv—Lu1—N2iv 0.0 O2xi—Si2—N2xii 108.6
O1i—Lu1—O2v 90.2 (2) N2xi—Si2—N2xii 108.6 (4)
N1i—Lu1—O2v 90.2 (2) O2iv—Si2—N2xii 108.6
O1ii—Lu1—O2v 179.5 (3) N2iv—Si2—N2xii 108.6 (4)
N1ii—Lu1—O2v 179.5 (3) O2xii—Si2—N2xii 0.0
N1—Lu1—O2v 90.2 (2) O2xi—Si2—N3 110.3 (3)
O2iii—Lu1—O2v 90.1 (3) N2xi—Si2—N3 110.3 (3)
N2iii—Lu1—O2v 90.1 (3) O2iv—Si2—N3 110.3 (3)
O2iv—Lu1—O2v 90.1 (3) N2iv—Si2—N3 110.3 (3)
N2iv—Lu1—O2v 90.1 (3) O2xii—Si2—N3 110.3 (3)
O1i—Lu1—N2v 90.2 (2) N2xii—Si2—N3 110.3 (3)
N1i—Lu1—N2v 90.2 (2) O2xi—Si2—Ba2xiii 59.07 (3)
O1ii—Lu1—N2v 179.5 (3) N2xi—Si2—Ba2xiii 59.07 (3)
N1ii—Lu1—N2v 179.5 (3) O2iv—Si2—Ba2xiii 151.4 (4)
N1—Lu1—N2v 90.2 (2) N2iv—Si2—Ba2xiii 151.4 (4)
O2iii—Lu1—N2v 90.1 O2xii—Si2—Ba2xiii 59.07 (3)
N2iii—Lu1—N2v 90.1 (3) N2xii—Si2—Ba2xiii 59.07 (3)
O2iv—Lu1—N2v 90.1 N3—Si2—Ba2xiii 98.27 (11)
N2iv—Lu1—N2v 90.1 (3) O2xi—Si2—Ba2xiv 151.4 (4)
O2v—Lu1—N2v 0.0 N2xi—Si2—Ba2xiv 151.4 (4)
N1—Ba2—O1ii 65.0 O2iv—Si2—Ba2xiv 59.07 (3)
N1—Ba2—N1ii 65.0 (3) N2iv—Si2—Ba2xiv 59.07 (3)
O1ii—Ba2—N1ii 0.0 O2xii—Si2—Ba2xiv 59.07 (3)
N1—Ba2—O1i 65.0 N2xii—Si2—Ba2xiv 59.07 (3)
O1ii—Ba2—O1i 65.0 (3) N3—Si2—Ba2xiv 98.27 (11)
N1ii—Ba2—O1i 65.0 (3) Ba2xiii—Si2—Ba2xiv 117.97 (6)
N1—Ba2—N1i 65.0 (3) O2xi—Si2—Ba2v 59.07 (3)
O1ii—Ba2—N1i 65.0 N2xi—Si2—Ba2v 59.07 (3)
N1ii—Ba2—N1i 65.0 (3) O2iv—Si2—Ba2v 59.07 (3)
O1i—Ba2—N1i 0.0 N2iv—Si2—Ba2v 59.07 (3)
N1—Ba2—O2vi 57.1 (2) O2xii—Si2—Ba2v 151.4 (4)
O1ii—Ba2—O2vi 87.01 (17) N2xii—Si2—Ba2v 151.4 (4)
N1ii—Ba2—O2vi 87.01 (17) N3—Si2—Ba2v 98.27 (11)
O1i—Ba2—O2vi 122.0 (3) Ba2xiii—Si2—Ba2v 117.97 (6)
N1i—Ba2—O2vi 122.0 (3) Ba2xiv—Si2—Ba2v 117.97 (6)
N1—Ba2—N2vi 57.1 (2) Al1vii—N1—Si1vii 0.0
O1ii—Ba2—N2vi 87.01 (17) Al1vii—N1—Al1vi 113.4 (6)
N1ii—Ba2—N2vi 87.01 (17) Si1vii—N1—Al1vi 113.4 (6)
O1i—Ba2—N2vi 122.0 (3) Al1vii—N1—Si1vi 113.4
N1i—Ba2—N2vi 122.0 (3) Si1vii—N1—Si1vi 113.4 (6)
O2vi—Ba2—N2vi 0.0 Al1vi—N1—Si1vi 0.0
N1—Ba2—O2vii 57.1 (2) Al1vii—N1—Lu1 123.3 (3)
O1ii—Ba2—O2vii 122.0 (3) Si1vii—N1—Lu1 123.3 (3)
N1ii—Ba2—O2vii 122.0 (3) Al1vi—N1—Lu1 123.3 (3)
O1i—Ba2—O2vii 87.01 (17) Si1vi—N1—Lu1 123.3 (3)
N1i—Ba2—O2vii 87.01 (17) Al1vii—N1—Ba2 92.8 (4)
O2vi—Ba2—O2vii 65.6 (3) Si1vii—N1—Ba2 92.8 (4)
N2vi—Ba2—O2vii 65.6 (3) Al1vi—N1—Ba2 92.8 (4)
N1—Ba2—N2vii 57.1 (2) Si1vi—N1—Ba2 92.8 (4)
O1ii—Ba2—N2vii 122.0 (3) Lu1—N1—Ba2 87.4 (2)
N1ii—Ba2—N2vii 122.0 (3) Al1vii—N1—Ba2xiv 90.4 (3)
O1i—Ba2—N2vii 87.01 (17) Si1vii—N1—Ba2xiv 90.4 (3)
N1i—Ba2—N2vii 87.01 (17) Al1vi—N1—Ba2xiv 90.4 (3)
O2vi—Ba2—N2vii 65.6 Si1vi—N1—Ba2xiv 90.4 (3)
N2vi—Ba2—N2vii 65.6 (3) Lu1—N1—Ba2xiv 86.8 (3)
O2vii—Ba2—N2vii 0.0 Ba2—N1—Ba2xiv 174.2 (4)
N1—Ba2—O2viii 87.01 (17) Al2xv—N2—Si2xv 0.0
O1ii—Ba2—O2viii 57.1 (2) Al2xv—N2—Si1 117.2 (5)
N1ii—Ba2—O2viii 57.1 (2) Si2xv—N2—Si1 117.2 (5)
O1i—Ba2—O2viii 122.0 (3) Al2xv—N2—Lu1xv 124.5 (5)
N1i—Ba2—O2viii 122.0 (3) Si2xv—N2—Lu1xv 124.5 (5)
O2vi—Ba2—O2viii 54.4 (3) Si1—N2—Lu1xv 118.3 (4)
N2vi—Ba2—O2viii 54.4 (3) Al2xv—N2—Ba2ix 92.07 (17)
O2vii—Ba2—O2viii 119.924 (18) Si2xv—N2—Ba2ix 92.07 (17)
N2vii—Ba2—O2viii 119.924 (18) Si1—N2—Ba2ix 91.25 (18)
N1—Ba2—N2viii 87.01 (17) Lu1xv—N2—Ba2ix 86.80 (17)
O1ii—Ba2—N2viii 57.1 (2) Al2xv—N2—Ce2ix 92.07 (17)
N1ii—Ba2—N2viii 57.1 (2) Si2xv—N2—Ce2ix 92.07 (17)
O1i—Ba2—N2viii 122.0 (3) Si1—N2—Ce2ix 91.25 (18)
N1i—Ba2—N2viii 122.0 (3) Lu1xv—N2—Ce2ix 86.80 (17)
O2vi—Ba2—N2viii 54.4 Ba2ix—N2—Ce2ix 0.0
N2vi—Ba2—N2viii 54.4 (3) Al2xv—N2—Ce2x 92.07 (17)
O2vii—Ba2—N2viii 119.9 Si2xv—N2—Ce2x 92.07 (17)
N2vii—Ba2—N2viii 119.924 (18) Si1—N2—Ce2x 91.25 (18)
O2viii—Ba2—N2viii 0.0 Lu1xv—N2—Ce2x 86.80 (17)
N2—Si1—O1vi 111.0 (4) Ba2ix—N2—Ce2x 173.6 (3)
N2—Si1—N1vi 111.0 (4) Ce2ix—N2—Ce2x 173.6 (3)
O1vi—Si1—N1vi 0.0 Al2xv—N2—Ba2x 92.07 (17)
N2—Si1—O1vii 111.0 (4) Si2xv—N2—Ba2x 92.07 (17)
O1vi—Si1—O1vii 109.3 (6) Si1—N2—Ba2x 91.25 (18)
N1vi—Si1—O1vii 109.3 (6) Lu1xv—N2—Ba2x 86.80 (17)
N2—Si1—N1vii 111.0 (4) Ba2ix—N2—Ba2x 173.6 (3)
O1vi—Si1—N1vii 109.3 Ce2ix—N2—Ba2x 173.6
N1vi—Si1—N1vii 109.3 (6) Ce2x—N2—Ba2x 0.0
O1vii—Si1—N1vii 0.0 Si2—N3—Al1vi 112.6 (5)
N2—Si1—O3ix 105.7 (6) Si2—N3—Si1vi 112.6 (5)
O1vi—Si1—O3ix 109.9 (4) Al1vi—N3—Si1vi 0.0
N1vi—Si1—O3ix 109.9 (4) Si2—N3—Al1xvi 112.6 (5)
O1vii—Si1—O3ix 109.9 (4) Al1vi—N3—Al1xvi 106.2 (5)
N1vii—Si1—O3ix 109.9 (4) Si1vi—N3—Al1xvi 106.2 (5)
N2—Si1—N3ix 105.7 (6) Si2—N3—Si1xvi 112.6 (5)
O1vi—Si1—N3ix 109.9 (4) Al1vi—N3—Si1xvi 106.2
N1vi—Si1—N3ix 109.9 (4) Si1vi—N3—Si1xvi 106.2 (5)
O1vii—Si1—N3ix 109.9 (4) Al1xvi—N3—Si1xvi 0.0
N1vii—Si1—N3ix 109.9 (4) Si2—N3—Si1viii 112.6 (5)
O3ix—Si1—N3ix 0.0 Al1vi—N3—Si1viii 106.2
N2—Si1—Al1vii 96.0 (2) Si1vi—N3—Si1viii 106.2 (5)
O1vi—Si1—Al1vii 33.3 (3) Al1xvi—N3—Si1viii 106.2
N1vi—Si1—Al1vii 33.3 (3) Si1xvi—N3—Si1viii 106.2 (5)
O1vii—Si1—Al1vii 88.8 (2) Si2—N3—Al1viii 112.6 (5)
N1vii—Si1—Al1vii 88.8 (2) Al1vi—N3—Al1viii 106.2 (5)
O3ix—Si1—Al1vii 143.1 (3) Si1vi—N3—Al1viii 106.2 (5)
N3ix—Si1—Al1vii 143.1 (3) Al1xvi—N3—Al1viii 106.2 (5)
N2—Si1—Al1vi 96.0 (2) Si1xvi—N3—Al1viii 106.2 (5)
O1vi—Si1—Al1vi 88.8 (2) Si1viii—N3—Al1viii 0.0 (2)

Symmetry codes: (i) −y+1, xy+1, z; (ii) −x+y, −x+1, z; (iii) −x+1, −y+1, z−1/2; (iv) y, −x+y+1, z−1/2; (v) xy, x, z−1/2; (vi) −x+y+1, −x+1, z; (vii) −y+1, xy, z; (viii) x−1, y, z; (ix) x+1, y, z; (x) x, y−1, z; (xi) xy−1, x−1, z−1/2; (xii) −x+1, −y, z−1/2; (xiii) xy, x−1, z−1/2; (xiv) xy+1, x, z−1/2; (xv) xy+1, x, z+1/2; (xvi) −y, xy−1, z.

Funding Statement

This work was funded by a joint research with Tohoku University and the Mitsu-bishi Chemical Group, Science and Technology ResearchCenter, Inc. J190002825 grant .

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Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Supplementary Materials

Crystal structure: contains datablock(s) I. DOI: 10.1107/S2056989020013158/ru2072sup1.cif

e-76-01708-sup1.cif (152.4KB, cif)

Structure factors: contains datablock(s) I. DOI: 10.1107/S2056989020013158/ru2072Isup2.hkl

e-76-01708-Isup2.hkl (34.4KB, hkl)

CCDC reference: 2034534

Additional supporting information: crystallographic information; 3D view; checkCIF report


Articles from Acta Crystallographica Section E: Crystallographic Communications are provided here courtesy of International Union of Crystallography

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