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. 2020 Nov 13;13(22):5132. doi: 10.3390/ma13225132

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Chunzi Zhang 1, Ozan Gunes 1, Yuanshi Li 2, Xiaoyu Cui 3, Masoud Mohammadtaheri 2, Shi-Jie Wen 4, Rick Wong 4, Qiaoqin Yang 2, Safa Kasap 1,*
PMCID: PMC7697904  PMID: 33203063

The authors would like to correct a typographical error in their paper [1]. The abstract and page 11 states 0.60 eV ± 0.5 eV for the bandgap. This should be 0.60 eV ± 0.05 eV, as apparent in the analysis and discussions in Section 4.

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Reference

  • 1.Zhang C., Gunes O., Li Y., Cui X., Mohammadtaheri M., Wen S.-J., Wong R., Yang Q., Kasap S. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials. 2019;12:2160. doi: 10.3390/ma12132160. [DOI] [PMC free article] [PubMed] [Google Scholar]

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