Correction to “Highly Efficient Super-Continuum Generation on an Epsilon-Near-Zero Surface”

On page 2459, paragraph 3, the carrier concentration n and mobility μ were provided incorrectly.

The sentence should begin, “In order to obtain the epsilon ε of the AZO thin film, the carrier concentration n and mobility μ were measured via the Hall effect with n = 0.7721 × 10²⁷/m³ and μ = 1.432 × 10^–3 m²/(V s).

Consequently, Figure 1f should be changed as follows. The epsilon-near-zero (ENZ) wavelength λ₀ of the AZO film is 1502 nm, and the electric field in the AZO film is enhanced by 70 times with respect to E_air at 1500 nm.

Figure 1f.

Linear relative epsilon of AZO film calculated by the Drude model. The condition Re(ε) = 0 occurs at λ₀ = 1502 nm. The shaded region shows the spectral range with Re(ε) less than 1.