Abstract
van der Waals SnI2 Monolayers
In article number 2100009, Ping Zhang, Shao‐Chun Li, and co‐workers demonstrate the direct growth of van der Waals SnI2 monolayer, a new semiconducting material. The SnI2 monolayer exhibits a band gap of 2.9 eV, and an indirect‐ to direct‐band gap transition occurs in the SnI2 bilayer, suggesting its potential application in future electronics/optoelectronics.

