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. 2021 Oct 21;8(20):2170134. doi: 10.1002/advs.202170134

Direct Growth of van der Waals Tin Diiodide Monolayers (Adv. Sci. 20/2021)

Qian‐Qian Yuan, Fawei Zheng, Zhi‐Qiang Shi, Qi‐Yuan Li, Yang‐Yang Lv, Yanbin Chen, Ping Zhang, Shao‐Chun Li
PMCID: PMC8529454

Abstract

van der Waals SnI2 Monolayers

In article number 2100009, Ping Zhang, Shao‐Chun Li, and co‐workers demonstrate the direct growth of van der Waals SnI2 monolayer, a new semiconducting material. The SnI2 monolayer exhibits a band gap of 2.9 eV, and an indirect‐ to direct‐band gap transition occurs in the SnI2 bilayer, suggesting its potential application in future electronics/optoelectronics.

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