Table 4.

The Hall effect measurement of GO and N-rGO at 300 K.

S/No	Material	Conductivity S cm−1	Carrier Density/ cm−3	Hall Coefficient/ cm3 C−1	Charge Carrier Mobility cm2/(V.s)
1	GO	1.567 × 10−6 ± 2%	8.26 × 10−9	1.21 × 1010	1.960 × 10−2
2	N-rGO1	0.625 ± 2%	−0.118	8.421	0.214
3	N-rGO2	0.757 ± 2%	−0.093	10.676	0.252
4	N-rGO3	0781 ± 2%	−0.083	11.932	0.368