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. 2022 Jan 19;15(3):739. doi: 10.3390/ma15030739

Theory of Electron Correlation in Disordered Crystals

Stanislav P Repetsky 1,2, Iryna G Vyshyvana 3, Sergei P Kruchinin 4, Stefano Bellucci 5,*
Editors: Paweł Głuchowski, Julia A Baimova, Filippo Berto
PMCID: PMC8836656  PMID: 35160684

Abstract

This paper presents a new method of describing the electronic spectrum and electrical conductivity of disordered crystals based on the Hamiltonian of electrons and phonons. Electronic states of a system are described by the tight-binding model. Expressions for Green’s functions and electrical conductivity are derived using the diagram method. Equations are obtained for the vertex parts of the mass operators of the electron–electron and electron–phonon interactions. A system of exact equations is obtained for the spectrum of elementary excitations in a crystal. This makes it possible to perform numerical calculations of the energy spectrum and to predict the properties of the system with a predetermined accuracy. In contrast to other approaches, in which electron correlations are taken into account only in the limiting cases of an infinitely large and infinitesimal electron density, in this method, electron correlations are described in the general case of an arbitrary density. The cluster expansion is obtained for the density of states and electrical conductivity of disordered systems. We show that the contribution of the electron scattering processes to clusters is decreasing, along with increasing the number of sites in the cluster, which depends on a small parameter.

Keywords: electronic spectrum, electrical conductivity, disordered crystals, the Hamiltonian of electrons and phonons, Green’s functions, the temperature Green’s functions, diagram technics, the mass operator of the Green’s function, density of states, free energy

1. Introduction

Advances in the description of disordered systems are mainly due to the development of the pseudopotential method [1]. However, due to the nonlocal nature of the pseudopotential, there is a problem of portability of the pseudopotential. It is impossible to use nuclear potentials, determined by the properties of some systems, in order to describe other systems. The use of the theory of Vanderbilt ultra-soft potentials [2,3] and the method of projector-augmented waves proposed by Blochl [4,5], allowed for achieving fundamental progress in investigating the electronic structure and the properties of the system. In the augmented-wave projector method, the wave function of the valence states of an electron (all-electron orbital) is expressed in terms of a pseudo-wave function. The pseudo wave function is expanded in a series of pseudo partial wave functions. The wave function is expanded in a series of partial wave functions with the same coefficients as in the expression for the pseudo wave function. Partial wave functions are described by the Schrödinger equation for non-interacting atoms. The expression for the pseudo Hamiltonian, as an equation for the pseudo wave function, is derived by minimizing the full energy functional. This approach was further developed through the use of the generalized gradient approximation proposed in [6,7,8,9,10]. The paper [10] describes the application of this method for calculating the electronic structure of crystals and molecules using the VASP and GAUSSIAN software packages, respectively.

It should be noted that in [11,12,13,14,15,16,17,18,19], the crystals electronic structure was carried out, including the Coulomb long-range interaction between electrons of different sites on the crystal lattice, thanks to a method based on the tight-binding model [20,21] and the functional density theory. However, such methods are suitable only for describing crystals characterized by ideal ordering. In disordered crystals, effects associated with localized electronic states occur. These effects cannot be described in a model where the crystal is treated as an ideal one.

Calculations of the electronic structure of an alloy are based on using the self-consistent method of the Korringa–Kohn–Rostoker-coherent potential approximations are made in work [22,23,24]. In [25], a virtual crystal approximation was proposed to study the properties of alloys by the density functional method. This approach is applied in the Vanderbilt ultra-soft pseudopotential scheme to predict the properties of Pb(Zr0.5Ti0.5)O3 alloys in its paraelectric and ferroelectric phases.

In our work [26], we present a new method of describing the electronic spectrum and electrical conductivity of disordered crystals based on the Hamiltonian of electrons and phonons. Electronic states of a system are described by the tight-binding model. Calculations of two-time Green’s functions are based on temperature Green’s functions [26]. This uses a known relation between spectral representation for two-time and temperature Green’s function [27]. The calculation of the temperature Green’s functions of disordered crystal based on diagram technics are analogous to the diagram technique for a homogeneous system [27]. A system of exact equations is obtained for the spectrum of elementary excitations in a crystal. This makes it possible to perform numerical calculations of the energy spectrum and to predict the properties of the system with a predetermined accuracy.

2. Hamiltonian of an Electron–Phonon System for a Disordered Crystal

The Hamiltonian of the disordered system (alloy, disordered semiconductor, and disordered dielectric) consists of the sum of the Hamiltonian of electrons in the nucleus field, the Hamiltonian of electron–electron interaction, and the Hamilton of nucleus. The motion of the ion subsystem is reduced to nucleus oscillations near the equilibrium position under the influence of the nuclei interaction force, and their indirect interaction through electrons. In the Wannier representation, the system Hamiltonian is as follows [26]:

H=H0+Hint (1)

where zero-order Hamiltonian

H0=He(0)+Hph(0) (2)

consists of the Hamiltonian of the electrons in the field of the cores of the atom’s ideal ordered crystal

He(0)=niγniγhniγ,niγ(0)aniγ+aniγ (3)

and the harmonic phonon Hamiltonian for the motion of the cores of the atom’s ideal ordered crystal

Hph(0)=niαPniα22Mi+12niαniαΦniα,niα(0)uniαuniα (4)

Symbol n denotes the number of a unit cell, i denotes the number of a node in a unit cell, and γ denotes all of the other quantum numbers for the orbital, including spin. The symbol h(0) denotes the “hopping integral” that connects the respective orbitals. For the phonon Hamiltonian, α is a spatial direction (x, y, or z), Pniα is the core momentum, Mi is the mass of the core, uniα is the deviation of the core from the equilibrium position of the lattice site, and Φniα,niα(0) is the corresponding spring-constant matrix.

The interaction Hamiltonian in Equation (1) is the perturbation of the system due to all of the effects we will be including. It is composed of six pieces:

Hint=δΦ+Hec+Heph+Hee+Hphc+Hphph (5)

δΦ is the modification of the core–core Coulomb interaction due to the disordered atoms added to the system; it is the difference between the original core–core repulsion Hamiltonian and the new one. The electronic Hamiltonian is modified by the term

Hec=niγniγwniγ,niγaniγ+aniγ (6)

which is the difference between the new hopping Hamiltonian and the original periodic one. The electron–phonon interaction is given by

Heph=niγniγv niγ,niγaniγ+aniγ (7)

It is described in more detail below. The Hamiltonian of the Coulomb interaction between electrons is given by the term

Hee=12n1,n2,n3,n4vn3,n4(2)n1,n2an1+an2+an3an4,n=(niγ). (8)

The modification of the interaction of the phonons with the cores caused by the disordering of the atoms is given by

Hphc=12niαniαΔMniα,niα1PniαPniα++12niαniαΔΦniα,niαuniαuniα, (9)

where

ΔMniα,niα1=(1Mni1Mi)δnnδiiδαα (10)

ΔΦniα,niα=Φniα,niαΦniα,niα(0), and Mni and Mi are the masses of the atoms at site (ni) for the disordered and ordered alloy, respectively.

We also include the cubic anharmonic potential terms for the phonons (under the assumption that they remain small and can be treated perturbatively via

Hphph=13!niαniαniαΦniα,niα,niα(0)uniα××uniαuniα. (11)

The operators aniγ+ and aniγ create and destroy electrons in the state described by Vane’s function ϕniγ(ξ)=ξ|niγ, where ξ=(r,σ) are the spatial and z-components of the spin coordinates of the wave function.

To construct the Wannier functions, we use analytical expressions for the wave functions of an electron in the field of atomic nuclei of type λ localized at the lattice sites (ni) of an ideally ordered crystal:

ψniδ(rrni)=Rε˜l(|rrni|)Ylm(rrni^),Ylm(rrni^)=Ylm(θ,φ), (12)

where θ,φ are the angular spherical coordinates of the vector rrni.

Here, δ=ε˜lm is an index that incorporates the quantum numbers for the energy value ε˜, the angular momentum quantum numbers are l and m, r is the electron position vector, and rni is the position vector for the atom at site (ni) in equilibrium

rni=rn+ρi,rn=νlνaν, (13)

rn is the position vector of the unit cell n of the crystal lattice, and ρi is the vector of the relative position of the node of the sublattice i in the unit cell n. The coordinates lν of the radius vector rn of the unit cell n of the crystal lattice are integers. The number ν takes on values ν=1,2,3 for three-dimensional crystals, ν=1,2 for two-dimensional crystals, and ν=1 for one-dimensional crystals.

Basis orthogonalization is performed with the Lowdin method [28]

|ψ˜niδ=S1/2|ψniδ,Sniδ,niδ=ψniδ|ψniδ, (14)

where Sniδ,niδ are the overlapping matrix.

Vane’s functions ϕniγ(r,σ), on which the Hamiltonian of the system are represented as in Equation (1), are defined from equation:

ϕniγ(r,σ)=ψ˜niδ(rrni)χσ(σ) (15)

where χσ(σ) is the spin part of wave function, γ=δσ.

The orthogonalized wave function can be represented as:

ψ˜n1i1δ1(r1,θ1,φ1)=n2,i2δ2Sn2i2δ2,n1i1δ112Rε˜2l2(r2)Yl2m2(θ2,φ2). (16)

In expression (16):

r1=rrn1i1,r2=rrn2i2=r1rn2i2n1i1,r2=((x1xn2i2n1i11)2+(x2xn2i2n1i12)2+(x3xn2i2n1i13)2)12,x1=r1sinθ1cosφ1,x2=r1sinθ1sinφ1,x3=r1cosθ1,xn2i2n1i1α=ν(lν(2)lν(1))aνα+ρi2αρi1α, (17)
cosθ2=r1cosθ1xn2i2n1i13r2, (18)
φ2=arccosr1sinθ1cosφ1xn2i2n1i11r2(1cos2θ2)12. (19)

Summation over n2i2 in expression (16) means summation over rn2i2, in accordance with Formula (13).

The overlap matrix Sniδ,niδ is found from the equation:

Sn1i1δ1,n2i2δ2=Rε˜1l1(r1)Yl1m1(θ1,φ1)Rε˜2l2(r2)Yl2m2(θ2,φ2)r12sinθ1dr1dθ1dφ1 (20)

where r2,θ2,φ2 are expressed through r1,θ1,φ1 in accordance with Formulas (17)–(19).

To find matrix Sn2i2δ2,n1i1δ112 in expression (16), we find the Fourier transform of the matrix (20):

Si1δ1,i2δ2(k)=n2Sn1i1δ1,n2i2δ2eik(rn2i2rn1i1). (21)

The vector k is defined by the expression

k=νkνbν,(aνbν)=2πδνν, (22)

bν is the basis vector of the translations of the reciprocal lattice.

Summing over n2 on the right-hand side of Formula (21) is easy to do if we replace it according to (13) and use

k(rn2i2rn1i1)=α=13νkνbνα(ν(lν(2)lν(1))aνα+ρi2αρi1α). (23)

As the matrix element Sn1i1δ1,n2i2δ2 decreases with the distance between the nodes n1i1, n2i2, in numerical calculations, when summing over n2 in expression (21), it is sufficient to restrict ourselves to a few coordination spheres. In this case, summation over n2 is reduced to summation over lν(2).

The matrix Sn1i1δ1,n2i2δ2 has an infinite rank. The rank of the matrix Si1δ1,i2δ2(k) is finite, which allows for finding the matrix Si1δ1,i2δ212(k). The matrix Sn2i2δ2,n1i1δ112 in expression (16) is found from equation:

Sn1i1δ1,n2i2δ212=1NkSi1δ1,i2δ212(k)eik(rn2i2rn1i1). (24)

The values hn1i1γ1,n2i2γ2(0) in Equation (3) are the matrix elements of the kinetic and potential energy nivλi(rrni) of the electron in the field of the cores of the atom’s ideal ordered crystal. The values hn1i1γ1,n2i2γ2(0) are defined by the expression:

hn1i1γ1,n2i2γ2(0)=n3i3δ3Ei1ε˜1Sn3i3δ3,n1i1δ112Sn3i3δ3,n2i2δ212δσ1,σ2+n3i3n1i1vn1i1γ1,n2i2γ2n3i3,γ=δσ. (25)

In the Formula (25)

vn1i1γ1,n2i2γ2n3i3=ψ˜n1i1δ1(r1,θ1,φ1)vi3(r3)ψ˜n2i2δ2(r2,θ2,φ2)r12sinθ1dr1dθ1dφ1×δσ1,σ2,Ei1ε˜1=me4(Zi1)222ε˜12,ε˜1=1,2,3,, (26)

Here, r2,θ2,φ2 is expressed through r1,θ1,φ1 in accordance with Formulas (17)–(19). The expression for r3 is obtained from expression (17) for r2 replacement xn2i2n1i1α by xn3i3n1i1α. Summation over n3i3 in expression (25) means summation over rn3i3, in accordance with Formula (13).

In Formula (26) and e are the mass and charge of the electron, respectively, and Zi is the ordinal number of an atom of the sort λ located in the site ni of an ideally ordered crystal. denotes the Planck’s constant.

The matrix element of the electron–ion interaction Hamiltonian in Equation (6) is given by

wniγ,niγ=niwniγ,niγni (27)

where

wniγ,niγni=λcniλ wniγ,niγλni, (28)
wniγ,niγλni=vniγ,niγλni+Δvniγ,niγλnivniγ,niγi (29)

vn1i1γ1,n2i2γ2λni is a matrix element of the potential of the core of the atom vλ(rrni).

The expression for vn1i1γ1,n2i2γ2λn3i3 is obtained from Formula (26) by replacing vi3(r3) with vλ(r3).

In Equation (28), cniλ is a discrete binary random number taking the values of 1 or 0, depending on whether an atom of type λ is at site (ni) or not, respectively. The symbol Δvniγ,niγλni will be defined next.

The expression for the electron–phonon interaction in Equation (7) is found through derivatives of the potential energy of the electrons in the ion core field due to a displacement of the atom by vector uni. In Equation (7), the value of v niγ,niγ is given by

v niγ,niγ=niαvniγ,niγniαuniα, (30)

where

vniγ,niγniα=λcniλ vniγ,niγλniα (31)

with vniγ,niγλniα the matrix elements of the following operator:

eniαdd|rrni|vλi(|rrni|),eni=rrni|rrni|. (32)

The expression for vn1i1γ1,n2i2γ2λn3i3α is obtained from Formula (26) by replacing in it vi3(r3) with

(xαxn3i3n1i1α)r3ddr3vλn3i3(r3). (33)

Δvniγ,niγλni in Equation (29) describes electron scattering on the static displacement of the atoms, and is defined by the equation

Δvniγ,niγλni=αvniγ,niγλniαuniαs,λ (34)

where uniαs,λ is the α projection of the static displacement of the atom of type λ in the site, and ni I caused by the difference in the atomic radii of the components of the disordered crystal.

Upon receipt of expressions (27)–(34), it was taken into account that the potential energy operator of the electron in the field of the atoms core can be expressed as:vni(rrni), rni=rni+unis+uni, with r being the electron’s radius vector, rni the radius-vector of atom’s equilibrium position in the site of the crystal lattice (ni), unis the vector of atom’s static displacement from equilibrium position in site (ni), and uni the atom’s displacement operator in site (ni). Expanding vni(rrni) in the series in powers uniα and restricting ourselves to linear terms, we arrive at expressions (27)–(34).

The matrix of the force constants arising from the direct Coulomb interaction of the ionic cores has the form:

Φniα,niα=ZniZnie24πε0|rn+ρirnρi|5××[3(rnα+ρiαrnαρiα)(rnα+ρiαrnαρiα)|rn+ρirnρi|2δαα],nini. (35)

where Zni is the serial number of the atom located in the lattice site ni of the disordered crystal, which is given by the expression

Zni=λcniλ Zi. (36)

This matrix Φniα,niα satisfies the following constraint:

niΦniα,niα=0. (37)

Multicenter integrals vn3,n4(2)n1,n2,n=(niγ) in Formula (8) can be represented as

vn3i3γ3,n4i4γ4n1i1γ1,n2i2γ2=e2δσ1σ4δσ2σ31|rr|×ψ˜n1i1δ1(r1,θ1,φ1)ψ˜n2i2δ2(r1,θ1,φ1)ψ˜n3i3δ3(r2,θ2,φ2)ψ˜n4i4δ4(r2,θ2,φ2)×d3r1d3r1. (38)

In Formula (38)

|rr|=(α(xαxαxn2i2n1i1α)2)12, (39)
d3r1=r12sinθ1dr1dθ1dφ1, (40)

When integrating over r1,θ1,φ1 in Formula (38), r2,θ2,φ2 should be expressed through r1,θ1,φ1, in accordance with Formulas (17)–(19), in which I is necessary to replace xn2i2n1i1α with xn4i4n1i1α. When integrating over r1,θ1,φ1 in Formula (38), r2,θ2,φ2 should be expressed through r1,θ1,φ1, in accordance with Formulas (17)–(19), in which it is necessary to replace xn2i2n1i1α with xn3i3n2i2α.

So, Formulas (17)–(19) describe the procedure for calculating the matrix elements hn1i1γ1,n2i2γ2(0), vn3i3γ3,n4i4γ4(2)n1i1γ1,n2i2γ2 Hamiltonian (1), containing one-electron and two-electron integrals.

3. Green’s Functions of Electrons and Phonons

We employ a Green’s function-based formalism to perform the calculations. Ultimately, we need the real-time retarded GrAB(t,t) and advanced GaAB(t,t) Green’s functions are each defined as follows [26]:

GrAB(t,t)=iθ(tt)<[A˜(t),B˜(t)]>,GaAB(t,t)=iθ(tt)<[A˜(t),B˜(t)]>. (41)

Here, the operators are expressed in the Heisenberg representation

A˜(t)=eiH t/A eiH t/, (42)

where is Planck’s constant, H=HμeNe, μe is the chemical potential of the electronic subsystem, and Ne is the electron number operator given by

Ne=niγaniγ+aniγ. (43)

In addition, the commutator or anticommutator is defined via

[A,B]=AB BA, (44)

where the commutator is used for Bose operators (−) and the anticommutator is used for Fermi operators (+). The symbol θ(t) is Heaviside’s unit step function. The angle brackets denote the thermal averaging with respect to the density matrix ρ

<A>=Tr (ρA), ρ=e(ΩH)/Θ, (45)

where Ω is the thermodynamic potential of the system given by exp(Ω/Θ) = Trexp(−H/Θ) and Θ=kbT, with kb Boltzmann’s constant and T the temperature.

The thermal Green’s functions are defined by

GAB(τ,τ)=<TτA˜(τ)B˜(τ)>, (46)

where the imaginary-time operator A˜(τ) is derived from the real-time Heisenberg representation and the substitution t=iτ. Hence,

A˜(τ)=eH τA eH τ. (47)

In addition, the time-ordering operator satisfies

TτA˜(τ)B˜(τ)=θ(ττ)A˜(τ)B˜(τ)+±θ(ττ)B˜(τ)A˜(τ), (48)

where the plus sign is used for Bose operators and the minus sign for Fermi operators.

We next go to the interaction representation by introducing the operator

σ(τ)=eH0 τeH τ, (49)

with H=H0+Hint and H0=H0μeNe.

Differentiating the expression for σ(τ) in Equation (68) with respect to τ and then integrating starting from 0, with the boundary condition σ(0)=1, we obtain:

σ(τ)=Tτexp[0τHint(τ)dτ], (50)

where Hint(τ)=eH0 τHint eH0 τ. Employing this result yields

A˜(τ)=σ1(τ)A(τ)σ(τ), (51)

with A(τ) in the Heisenberg representation with respect to the noninteracting Hamiltonian. Substituting these results into the definition of the thermal Green’s function creates the alternate interaction-representation form for the Green’s function, given by

GAB(τ,τ)=<TτA(τ)B(τ)σ(1/Θ)>0<σ(1/Θ)>0 (52)

where all time dependence is with respect to the noninteracting Hamiltonian and the trace over all states is with respect to the noninteracting states

<A>0=Tr(ρ0A), ρ0=e(Ω0H0)/Θ. (53)

Next, we expand expression (51) for σ(1/θ) in a series in powers of the interaction Hamiltonian Hint(τ) and substitute this expression in Formula (53).

The diagrammatic method is generated by expanding σ(τ) in a power series in terms of Hint(τ), and then using Wick’s theorem to evaluate the resulting operator averages.

The numbers of quantum states for different operators in the interaction Hamiltonian Hint(τ) (5)–(11), (51) are different, and the values of the argument τ are the same.

Each operator can be assigned a quantum state number and an argument number τ, if in expression (51) for σ(1/θ) the operator Hint(τ) is replaced by an operator Hint(τ,τ1,,τk) in which the values of the argument τ for operators with different quantum states are different, the matrix elements differ from the matrix elements of the operator Hint(τ) by a factor δ(ττ1)δ(ττk), and the single integral over τ is replaced by the integral over τ,τ1,,τk multiplicity k+1. The multiplicity of the integral is different for different types of interaction. In expression (53) for GAB(τ,τ), the term of the series for σ(1/θ) (51) forms a multiple sum over quantum states and an integral over τ of the mean T-product of operators Hint(τ,τ1,,τk) multiplied by an operator A(τ)B(τ). The T-product of operators is averaged over the occupation numbers of the quantum states of the system of noninteracting electrons and phonons, in accordance with Formula (53). The numbers of the quantum states for the operators in the indicated T-product are ordered by the matrix elements of the interaction operators Hint(τ,τ1,,τk), in accordance with Formulas (5)–(11), in such a way that pairs of operators are formed. This is due to the fact that among the average T-products of operators, only those in which the number of operators is even for the electron subsystem and the phonon subsystem are nonzero. The quantum state for each operator of the pair, except for the operators A(τ), B(τ), coincides with one of the quantum states for the corresponding matrix element of the interaction operators Hint(τ,τ1,,τk) in the given product.

Let us give the averaging technique in expression (71) a simpler form. For this, in the T-product of each pair of operators an1(τ1)an2+(τ2),n=(niγ) for the electron subsystem and un1(τ1)un2(τ2), Pn1(τ1)Pn2(τ2), un1(τ1)Pn2(τ2), Pn1(τ1)un2(τ2), n=(niα) for the phonon subsystem, in the Hamiltonian of the system of noninteracting electrons and phonons H0 (2)–(4), (53), we compare the sum of the products of pairs of operators H0n1n2, the numbers of quantum states of which coincide with the numbers of quantum states depending on τ the operators of the pair.

Provided that the numbers of quantum states for the operators in the T-product are ordered by the matrix elements of the interaction operators Hint(τ,τ1,,τk) standing in it, the operators exp(H0n1n2/θ), exp(H0n1n2τ) change places with the products depending on τ other pairs of operators. It follows from this that the average of the T-product of several operators in expression (53) is equal to the product of the average T-products of pairs of operators that determine the matrices of the Green’s functions for the zero-order Hamiltonian H0. This statement also extends to the case when the quantum states for the operators of a pair coincide with the quantum states for the operators of other pairs. This follows from the fact that the distribution function of a system of an infinite number of particles over the occupation numbers of quantum states has a sharp maximum, and the most probable value of a physical quantity is equal to its average value. The quantum state ni and the argument τi for each operator of the pair, except for the operators A(τ), B(τ), coincides with one of the quantum states ni and arguments τi for the corresponding matrix element of the interaction operators Hint(τ,τ1,,τk) in the given product. In expression (71), the Green’s function GAB(τ,τ) is summed over quantum states ni and integrated over arguments τi.

The averaging technique described above in expression (71) for the Green’s function GAB(τ,τ) is the essence of Wick’s theorem. This technique then generalizes the approach used for the homogeneous system [27].

The technique for calculating the Green’s function GAB(τ,τ) (53) becomes clearer if the terms on the right-hand side of Equation (53) are represented in the form of diagrams. If the Green’s function of the system is expressed as a series only over connected diagrams [27], then the denominator in Formula (53) will cancel out with the same factor in the numerator. So, the thermal Green’s function is expanded in terms of connected diagrams. The indicated diagrammatic series can be easily summed up, which makes it possible to go beyond the framework of the first approximations of the perturbation theory and obtain equations for the Green’s functions of the system.

Summing up the indicated series, using the standard relation between the spectral representations of the temperature and real-time Green’s functions and performing an analytical continuation on the real axis, we obtain the following equations for the retarded Green’s functions [26] (hereinafter the dependence on r is suppressed):

Gaa+(ε)=G0aa+(ε)+G0aa+(ε) (w+Σeph(ε)+Σee(ε)) Gaa+(ε)Guu(ε)=G0uu(ε)+G0uu(ε) (ΔΦ+Σphe(ε)+Σphph(ε))××Guu(ε)+G0uP(ε)ΔM1GPu(ε),GPP(ε)=G0PP(ε)+G0PP(ε)ΔM1GPP(ε)+G0Pu(ε)××(ΔΦ+Σphe(ε)+Σphph(ε)) GuP(ε),GuP(ε)=G0uP(ε)+G0uP(ε)ΔM1GPP(ε)+G0uu(ε)××(ΔΦ+Σphe(ε)+Σphph(ε)) GuP(ε),GPu(ε)=G0Pu(ε)+G0Pu(ε) (ΔΦ+Σphe(ε)+Σphph(ε))××Guu(ε)+G0PP(ε)ΔM1GPu(ε), (54)

where ε=ω. Here, Gaa+(ε), Guu(ε), GPP(ε), GuP(ε), GPu(ε) are the real-frequency representation of the single-particle Green’s function of the electrons, the coordinate-coordinate, momentum–momentum, coordinate–momentum, and momentum–coordinate Green’s functions of the phonons, respectively; and Σeph(ε), Σphe(ε), Σee(ε), Σphph(ε) are the corresponding self-energies (mass operators) for the electron–phonon, phonon–electron, electron–electron, and phonon–phonon interactions.

The real-time and real-frequency Green’s functions are related by standard Fourier transform relations given by

Gr,aAB(t)=12πGr,aAB(ω) eiωtdω (55)

and

Gr,aAB(ω)=Gr,aAB(t) eiωtdt. (56)

The thermal Green’s functions are periodic (bosons) or antiperiodic (fermions) on the interval −1/Θ ≤ τ < 1/Θ, and hence have a Fourier series representation in terms of their Matsubara frequencies, as follows:

GAB(τ)=ΘωnGAB(ωn) eiωnτ (57)

and

GAB(ωn)=121/Θ1/ΘGAB(τ) eiωnτdτ, (58)

where the Matsubara frequencies satisfy

ωn={2nπ Θfor Bose particles,(2n+1)π Θfor Fermi particles, n=0, ±1, ±2, (59)

The electronic Green’s functions are infinite matrices with indices given by the lattice site n, the basis site i, and the other quantum numbers γ. Similarly, the phonon Green’s functions also are infinite matrices with the same lattice and basis site dependence, plus a dependence on the spatial coordinate direction α. Using the equations of motion for Green’s functions, one can obtain simple expressions for the zero-order Green’s functions, namely [26]:

G0aa+(ε)=[εH0(1)]1, (60)

with

H0(1)=hniγ,niγ(0), (61)
G0uu(ε)=[ω2M(0)Φ(0)]1, (62)

with

Φ(0)=Φ(0)niα,niα (63)

and

M(0)=Miδnnδiiδαα. (64)

Here, the double lines denote a matrix.

When the perturbations are small, given by

(ε22ΔM+ΔΦ+Σphe(ε)+Σphph(ε))niα,niαΦniα,niα(0)<<1, (65)

then the solution of the system of equations in Equation (55) becomes

Gaa+(ε)=[εH0(1)(w+Σeph(ε)+Σee(ε))]1, (66)
Guu(ε)=[ω2M(0)Φ(0)(ε22ΔM+ΔΦ+Σphe(ε)+Σphph(ε))]1, (67)
GPP(ε)=ε22(M(0))2 Guu(ε), (68)

where

ΔM=(MiMni)δnnδiiδαα,ε=ω. (69)

The mass operator of the Green’s function of electrons for the electron–phonon interaction Σeph(τ,τ) is described by the diagram in Figure 1. The mass operator of the Green’s function of electrons for the electron–phonon interaction Σeph(τ,τ) is described by the diagram in [26,29,30].

Figure 1.

Figure 1

Diagram for Σeph niγ,niγ(τ,τ)=Σeph n˜γ,n˜γ. Here n˜=(niτ).

Solid lines in Figure 1 correspond to the Green’s function of electrons Gniγ,niγaa+(τ,τ) and dashed lines correspond to the Green’s function of phonons Gniα,niαuu(τ,τ). The vertex part Γniγ,n1i1γ1n2i2α2(τ2,τ,τ1) of the mass operator of the Green’s function is described by the diagrams in Figure 2.

Figure 2.

Figure 2

Diagrams for the vertex part Γniγ,n1i1γ1n2i2α2(τ2,τ,τ1)=Γn˜γ,n˜1γ1n˜2α2. Here n˜=(niτ).

The not shaded triangle in Figure 2 corresponds to equation

Γ0 niγ,n1i1γ1n2i2α2(τ2,τ,τ1)=vniγ,n1i1γ1n2i2α2δ(ττ2) δ(ττ1). (70)

In Figure 1 and Figure 2, summation for internal points n˜γ is carried out. Summation of n˜γ provides summation of niγ and integration over τ. Expressions that correspond to each diagram are attributed to multiplier (1)n+F, where n is the diagram’s order (namely the number of vertices Γ0 in the diagram), and F is the number of lines for the Green’s function of electrons Gaa+. This function goes out and goes in in the same vertices.

Explicitly, the electron–phonon self-energy becomes

Σeph niγ,niγ(ε)=14πidεcoth(ε2Θ) Γ niγ, n3i3γ3(0)n1i1α1××[Gn1i1α1,n2i2α2uu(ε)Gn1i1α1,n2i2α2uu *(ε)] Gn3i3γ3,n4i4γ4aa+××(εε)Γ n4i4γ4,niγn2i2α2, (71)
Γ niγ, n3i3γ3(0)n1i1α1=vniγ, n3i3γ3n1i1α1. (72)

where repeated indices are summed over.

Phonon–electron interaction is described by the diagram in Figure 3. Phonon–electron interaction is described by the diagram in [29,30].

Figure 3.

Figure 3

Diagram for Σphe niα,niα(τ,τ)=Σphe n˜α,n˜α. In Figure 3, n˜=(niτ).

The designation in Figure 3 corresponds to designations in Figure 1 and Figure 2.

The self-energy of the phonon due to the phonon–electron interaction is given by

Σphe niα,niα(ε)=12πidε f(ε)Γn2i2γ2,n1i1γ1 (0)niα××{[Gn1i1γ1,n3i3γ3aa+(ε+ε)Gn1i1γ1,n3i3γ3aa+*(ε+ε)]××Gn4i4γ4,n2i2γ2aa+*(ε)+Gn1i1γ1,n3i3γ3aa+(ε+ε)××[Gn4i4γ4,n2i2γ2aa+(ε)Gn4i4γ4,n2i2γ2aa+*(ε)]}××Γ n3i3γ3,n4i4γ4 niα. (73)

where f(ε) is the so-called Fermi–Dirac distribution function.

Diagrams for the mass operator Σee(τ,τ) that describe the electron–electron interaction, are shown in Figure 4. Diagrams for the mass operator Σee(τ,τ) that describe electron–electron interaction, are shown in [26,29,30].

Figure 4.

Figure 4

Diagrams for Σee niγ,niγ(τ,τ)=Σee n˜γ,n˜γ. Here n˜=(niτ).

The vertex parts Γniγ,niγn2i2γ2,n1i1γ1(τ2,τ1τ,τ) are shown in diagrams in Figure 5.

Figure 5.

Figure 5

Diagrams for vertex part Γniγ,niγn2i2γ2,n1i1γ1(τ2,τ1τ,τ)=Γn˜γ,n˜γn˜2γ2,n˜1γ1. Here n˜=(niτ).

Not shaded triangle in Figure 5 corresponds to equation

Γ0 niγ,niγn2i2γ2,n1i1γ1(τ2,τ1τ,τ)=v˜n1i1γ1,niγ(2)niγ,n2i2γ2×δ(ττ2)δ(ττ1)δ(ττ), (74)
v˜n1i1γ1,niγ(2)niγ,n2i2γ2=vn1i1γ1,niγ(2)niγ,n2i2γ2vniγ,n1i1γ1(2)niγ,n2i2γ2 (75)

The mass operator that describes the electron–electron interaction is:

Σee niγ,niγ(ε)=Σee niγ,niγ(1)+Σee niγ,niγ(2)(ε), (76)
Σee n,n(1)=12πidε f(ε) Γ n, n (0) n2,n1[Gn1,n2aa+(ε)Gn1,n2aa+ *(ε)], (77)
Σee n,n(2)(ε)=(12πi)2dε1dε2 f(ε1)f(ε2)Γ n2,n1 (0) n,n3 ×[Gn2,n5aa+ (εε1ε2)Gn1,n4aa+(ε1)Gn2,n5aa+(εε1ε2)Gn1,n4aa+ (ε1)]××[Gn6,n3aa+(ε2)Gn6,n3aa+ *(ε2)][Gn2,n5aa+(εε1ε2)Gn2,n5aa+ *(εε1ε2)]××[Gn1,n4aa+(ε1)Gn6,n3aa+(ε2)Gn1,n4aa+ *(ε1)Gn6,n3aa+ *(ε2)]}Γ n4, n n5,n6, (78)
Γn2,n1(0)n,n3=v˜n2,n1(2)n,n3=vn2,n1(2)n,n3vn1,n2(2)n,n3n=niγ (79)

A similar result for the contribution to the phonon self-energy Σphph(ε) from phonon–phonon coupling is given in [26].

In deriving the expressions in Equations (72), (74), (78), and (79), we employed the standard resummation techniques for any function ϕ(z) that is analytic in the region covered by contour C, which encloses all of the Matsubara frequencies. Namely, we have

Θωnϕ(iωn)=14πiCdz coth(z2Θ)ϕ(z) (ωn=2nπ Θ), (80)

for the Bosonic case, and

Θωnϕ(iωn)=12πiCdz f˜(zΘ)ϕ(z) (ωn=(2n+1)π Θ), (81)

for the Fermionic case, with

f˜(zΘ)=1exp(zΘ)+1. (82)

We comment that for the many-body Green’s functions described here, it is customary to have the chemical potential situated at zero frequency, as dine here.

In general, the renormalization of the vertex of the mass operator of the Green’s functions in expressions (72), (74), and (79) can be performed using Figure 2 and Figure 5. The diagrams in Figure 2 and Figure 5 correspond to the equation

Γ n3i3γ3,n4i4γ4niα=Γ n3i3γ3,n4i4γ4(0)niα12πidεf(ε)Γ n5i5γ5,n6i6γ6(0)niα×[Gn6i6γ6,n7i7γ7aa+(ε)Gn8i8γ8,n5i5γ5aa+(ε)Gn6i6γ6,n7i7γ7aa+(ε)Gn8i8γ8,n5i5γ5aa+(ε)]×Γ n7i7γ7,n8i8γ8(0)n9i9α9Gn9i9α9,n10i10α10uu(0)Γn3i3γ3,n4i4γ4n10i10α10 (83)

and

Γ n4, n n5,n6=Γ n4, n(0) n5,n612πidεf(ε)Γ n4, n8(0) n5,n7×[Gn7,n9aa+(ε)Gn8,n10aa+(ε)Gn7,n9aa+(ε)Gn8,n10aa+(ε)]×Γ n10, n n9,n6,n=niγ. (84)

Summation is implied over repeated indices in expressions (84) and (85).

The Fermi level εFμe of the system is determined by equation:

<Z>=f(ε) ge(ε) dε, (85)
f(ε)=1exp(εεFΘ )+1 (86)

where <Z> is the average number of electrons per atom and ge(ε) is the many-body electronic density of states, which satisfies

ge(ε)=1πνN Im TrGaa+(ε)c (87)

Here, c denotes configurational averaging over the disorder, N is the number of primitive lattice cells, and ν is the number of atoms per primitive cell. We drop the letter c on the configurational averaging for simplicity. In Equation (86), Z is the average number of electrons per atom.

It should be noted that the first term in the electron self-energy due to electron–electron interactions, Σee niγ,niγ(1) in Equation (77), describes the Coulomb and exchange electron–electron interactions in the Hartree–Fock approximation. The second term, Σee niγ,niγ(2)(ε), which is caused by corrections beyond Hartree–Fock, describes the effects of electron correlations. As opposed to the procedures used in [13,14,15,16,17,18,19], the long-range Coulomb interaction of electrons located at different lattice sites of the crystal is described by taking into account an arbitrary number of energy bands.

The expression for the Green’s function in Equations (67) and (68) differs from the corresponding expressions for the Green’s function of a single-particle Hamiltonian of a disordered system, only from the different self-energy contributions. Hence, we solve for the Green’s function using the well-known methods of disordered systems theory [31,32].

To find the density of states by Formula (88), it is necessary to find the average values of the Green’s functions defined by Formulas (67) and (68).

4. Localized Magnetic Moments

As we will be working with magnetic moments in the remainder of the paper, we now slightly modify our notation so that the symbol γ=δσ=ε˜lmσ now refers to all other quantum numbers, except for spin, and we introduce the spin quantum number σ explicitly in all of the following equations. The electron–electron self-energy in Equation (67) requires the occupation number Zniδσ λmλi of the different electronic states (niδσ), where we are explicitly including the dependence on σ. The explicit values for Zniδσ λmλi are calculated from Equation (86), where the total electronic density of states ge(ε) is replaced by the partial density of states gniδσλ mλi(ε) for energy band δ and spin projection σ, to allow for magnetic solutions. The occupation numbers Zniδσ λmλi and the partial density of states gniδσλ mλi(ε) then satisfy

Zniδσ λmλi=f(ε) gniδσλmλi(ε) dε, (88)
gniδσλmλi(ε)=1πImGniδσ,niδσaa+(ε)|(ni)λmλi (89)

Note that disorder averaging is done under the assumption that an atom of type λ is located at the site (ni), and its projection of the localized magnetic moment onto the z-axis is equal to mλi. The probability of this configuration is Pniλmλi, and we have the obvious constraint that

λ,mλiPniλmλi=1.  (90)

The total charge and magnetization for each orbital on a site are given by

Zniδλmλi=Zniδσλmλi+Zniδ,σλmλi, mλiδ=ZniδσλmλiZniδ,σλmλi, (91)

and by

Zniδσλmλi=Zniδλmλi+mλiδ2, Zniδ,σλmλi=Zniδλmλimλiδ2, (92)

respectively. We need to sum over all other quantum numbers to get the totals:

Zniλmλi=δZniδλmλi, mλi=δmλiδ. (93)

5. Density of Electronic and Phononic States

In Equations (67) and (68), by introducing the mass operator as the sum of one site operators and selecting it as a zero approximation, the effective medium Green’s function cluster expansion for Green’s functions Gaa+(ε), Guu(ε), is performed. The specified expansion is a generalization of the cluster expansion for the Green’s function Gaa+(ε) of single-particle Hamiltonian. Green’s functions of the effective environment are defined by the expressions:

G˜aa+(ε)=[εh(0)Σ˜eph(ε)Σ˜ee(ε)σe(ε)]1, (94)
G˜uu(ε)=[ε22M(0)Φ(0)Σ˜phe(ε)σph(ε)]1. (95)

Expressions for the operators Σ˜eph(ε), Σ˜phe(ε), and Σ˜ee(ε) are obtained from the expressions for the mass operators Σeph(ε), Σphe(ε), and Σee(ε) (72)–(80) by replacing the vertex parts Γ niγ, n3i3γ3(0)n1i1α1, Γn2,n1(0)n,n3, nniγ by their expressions for ideally ordered crystals, and replacing the Green’s functions Gaa+(ε), Guu(ε) with the Green’s functions of the effective medium G˜aa+(ε), G˜uu(ε). Expressions for operators σe(ε) and σph(ε) in Formulas (95) and (96) will be given below.

The Green’s functions in Equations (67) and (68) satisfy a Dyson equation that can be expressed in terms of a T-matrix via:

G(ε)=G˜(ε)+G˜(ε) T(ε) G˜(ε), (96)

where the T-matrix T is represented by a series, in which each term describes the scattering of clusters with different numbers of nodes expressed schematically by

T=(n1i1)tn1i1+(n1i1)(n2i2)T(2) n1i1,n2i2+ (97)

Here, we have

T(2) n1i1,n2i2=[Itn1i1G˜tn2i2G˜]1tn1i1G˜tn2i2[I+G˜tn1i1], (98)

where tn1i1 is the on-site scattering operator, which is given by

tn1i1=[I(Σn1i1σn1i1)G˜]1(Σn1i1σn1i1). (99)

The self-energy employed in Equation (67), Σen1i1(ε), satisfies

w+Σeph(ε)+Σee(ε)Σ˜eph(ε)Σ˜ee(ε)=(n1i1)Σen1i1(ε), (100)

for the electrons. For the phonons, we have

ε22ΔM+ΔΦ+Σphe(ε)+Σphph(ε)Σ˜phe(ε)Σ˜phph(ε)=(n1i1)Σphn1i1(ε) (101)

Using Equations (72), (77)–(79), and (101), we obtain the expression for the intrinsic energy part Σeniγ,niγλn1i1(ε), which describes the scattering of electrons:

Σen1i1γ1,n2i2γ2λmλini(ε)=wn1i1γ1,n2i2γ2λni++n3i3γ3n4i4γ4v˜n3i3γ3,n2i2γ2(2)n1i1γ1,n4i4γ4(Zn3i3γ3,n4i4γ4λmλiniZ˜n3i3γ3,n4i4γ4λmλini), (102)

where

Zn3i3γ3,n4i4γ4λmλini=1πf(ε,εF) ImGn3i3γ3,n4i4γ4aa+(ε)|(ni)λmλi dε. (103)

The value of Z˜n3i3γ3,n4i4γ4λmλini in Equation (103) is derived from Equation (104) by replacing the full Green’s function by the effective medium Green’s function. The diagonal elements of the matrix Zn3i3γ3,n4i4γ4λmλini in Equation (104) are equal to the occupation numbers of the electron states Zniδσ λmλi in Equation (89).

Using Equations (10), (70), (74), and (102), we obtain the expression for the intrinsic energy part Σphniα,niαλn1i1(ε), which describes the scattering of phonons:

Σphniα,niαλn1i1(ε)=ε22(Mi1Mλ)δnnδiiδαα (104)

It should be noted that, in the limit of an infinite crystal, on the right-hand side of Equations (103) and (105), the terms inversely proportional to the number of lattice sites are neglected.

We require the fulfillment of the condition

t0i1=0, (105)

from which follows the system of coupled equations for the operator, in Formulas (95) and (96):

σe0i1(ε)=[1(Σe0i1(ε)σe0i1(ε))G˜aa+(ε)]11××[1(Σe0i1(ε)σe0i1(ε))G˜aa+(ε)]1Σe0i1(ε), (106)
σph0i1(ε)=[1(Σph0i1(ε)σph0i1(ε))G˜uu(ε)]11××[1(Σph0i1(ε)σph0i1(ε))G˜uu(ε)]1Σph0i1(ε). (107)

The matrix elements of the Green’s function of the electron subsystem of the effective medium can be calculated using Fourier transformation

G˜niγ,niγaa+(ε)=1NkG˜iγ,iγaa+(k,ε)eik(rnirni), (108)
G˜aa+(k,ε)=(εH˜(k,ε))1, (109)

where

H˜(k,ε)=h(0)(k)+Σ˜eph(k,ε)+Σ˜ee(k,ε)+σe(k,ε), (110)

N is the number of primitive unit cells.

We do a similar procedure for the effective medium phonon Green’s function, which satisfies

G˜niα,niαuu(ε)=1NkG˜iα,iαuu(k,ε)eik(rnirni), (111)
G˜uu(k,ε)=(ε22M(0)Φ˜(k,ε))1, (112)

where we have

Φ˜(k,ε)=Φ(0)(k)+Σ˜phe(k,ε)+Σ˜phph(k,ε)+σph(ε), (113)
Miα,iα(0)=Miδiiδαα. (114)

Note that wave vector k varies within the first Brillouin zone. Furthermore, we have that Σ˜eph(k,ε) is the Fourier transformation of the matrix Σeph niγ,niγ(ε) given in Equation (72), for which the terms vniγ, n3i3γ3n1i1α1 are replaced by the values for a pure crystal and the corresponding Green’s functions are those of the effective medium. The other self-energies given by Σ˜ee(k,ε), Σ˜phe(k,ε), and Σ˜phph(k,ε) are defined similarly. In Equation (114), Φ(0)(k) is the Fourier transform of the matrix Φ(0)niα,niα, which describes the atomic nucleus repulsion. The self-energy Σ˜phe(k,ε) describes the attractive interaction between the atomic nuclei and the electrons.

The matrix Σphniα,niαλn1i1(ε) in expression (105) is diagonal. From expression (108), it follows that the matrix σph(ε) is also diagonal, and its Fourier transform σphiα,iα(ε)=σphi(ε)δiiδαα in expression (114) does not depend on the wave vector k. In the diagonal disorder approximation, the matrix wniγ,niγλn1i1 in expression (103) is diagonal in indices n,n. Neglecting the second term on the right-hand side of Equation (103), we obtain from Equation (107) that in this approximation the matrix σe(ε) is also diagonal in indices n,n, and its Fourier transform σeiγ,iγ(ε) in expression (111) does not depend on wave vector k. The Fourier transform of the mass operator of electron–phonon interaction has the form:

Σ˜eph iγ,iγ(k,ε)=14πi1Ndε1coth(ε12Θ)×k1 Γ iγ, i3γ3(0)i1α1(k,kk1)[G˜i1α1,i2α2uu(k1ε1)G˜i1α1,i2α2uu *(k1ε1)]×G˜i3γ3,i4γ4aa+(kk1,εε1)Γ˜ i4γ4,iγi2α2(k+k1,k). (115)

The Fourier transform of the phonon–electron interaction mass operator is:

Σ˜phe niα,niα(k,ε)=12πi1Ndε1 f(ε1)Γi2γ2,i1γ1 (0)iα(k1,k+k1)×{[G˜i1γ1,i3γ3aa+(k+k1,ε+ε1)G˜i1γ1,i3γ3aa+*(k+k1,ε+ε1)]×G˜i4γ4,i2γ2aa+*(k1,ε1)+G˜i1γ1,i3γ3aa+(k+k1,ε+ε1)×[G˜i4γ4,i2γ2aa+(k1,ε1)G˜i4γ4,i2γ2aa+*(k1,ε1)]}Γ˜ i3γ3,i4γ4 iα(kk1,k1). (116)

The vertex parts of the mass operators of electron–phonon and phonon–electron interactions are determined by the equation:

Γ˜ i3γ3,i4γ4niα(k1,k2)=Γ i3γ3,i4γ4(0)iα(k1,k2)12πi1Ndεf(ε)×Γ i5γ5,i6γ6(0)iα(k1+k2k5,k5)×[G˜i6γ6,i7γ7aa+(k5,ε)G˜i8γ8,i5γ5aa+(k1k2+k5ε)G˜i6γ6,i7γ7aa+(k5,ε)G˜i8γ8,i5γ5aa+(k1k2+k5ε)]×Γ i7γ7,i8γ8(0)i9α9(k5,k1k2+k5)G˜i9α9,i10α10uu(k1+k2,0)×Γ˜i3γ3,i4γ4i10α10(k1,k1+k2). (117)

In expressions (116)–(118)

Γ i1γ1,i2γ2(0)iα(k1,k2)=n1,n2vn1i1γ1,n2i2γ2niαexp(ik1(rn1i1rni)+ik2(rn2i2rni)). (118)

The Fourier transform of the mass operator of the electron–electron interaction can be represented as:

Σ˜ee iγ,iγ(k,ε)=Σ˜ee iγ,iγ(1)(k)+Σ˜ee iγ,iγ(2)(k,ε), (119)
Σ˜ee iγ,iγ(1)(k)=12πi1N×dε1 f(ε1)k1Γiγ,iγ (0) i2γ2,i1γ1(k,k1,k1)×[G˜i1γ1,i2γ2aa+(k1,ε1)G˜i1γ1,i2γ2aa+ *(k1,ε1)], (120)
Σ˜eeiγ,iγ(2)(k,ε)=(12πi)21N2dε1dε2×f(ε1)f(ε2)k1,k2Γ i2γ2,i1γ1 (0) iγ,i3γ3(k,k1k2+k,k1)×{[Gi2γ2,i5γ5aa+ (kk1k2,εε1ε2)Gi1γ1,i4γ4aa+(k1,ε1)Gi2γ2,i5γ5aa+ (kk1k2,εε1ε2)Gi1γ1,i4γ4aa+(k1,ε1)]×[G˜i6γ6,i3γ3aa+(k2,ε2)G˜i6γ6,i3γ3aa+(k2,ε2)][G˜i2γ2,i5γ5aa+(kk1k2,εε1ε2)G˜i2γ2,i5γ5aa+(kk1k2,εε1ε2)]×[G˜i1γ1,i4γ4aa+(k1,ε1)G˜i6γ6,i3γ3aa+(k2,ε2)G˜i1γ1,i4γ4aa+(k1,ε1)G˜i6γ6,i3γ3aa+(k2,ε2)]}×Γ˜ i4γ4,iγ i5γ5,i6γ6(k1+k2k,k2,k1). (121)

The vertex part of the mass operator of the electron–electron interaction is determined by the equation:

Γ˜ i4γ4,iγ i5γ5,i6γ6(k1,k2,k3)=Γ i4γ4,iγ (0)i5γ5,i6γ6(k1,k2,k3)12πi1Ndεf(ε)k4Γ i4γ4,i8γ8(0) i5γ5,i7γ7(k1,k2,k4)×[G˜i7γ7,i9γ9aa+(k4,ε)G˜i8γ8,i10γ10aa+(k1k2k4,ε)G˜i7γ7,i9γ9aa+(k4,ε)G˜i8γ8,i10γ10aa+(k1k2k4,ε)]×Γ˜ i10γ10,iγ i9γ9,i6γ6(k1+k2+k4,k4,k3). (122)

In expression (123)

Γ i1γ1,iγ(0)i2γ2,i3γ3(k1,k2,k3)=n1,n2,n3v˜n3i3γ3,niγ(2) n1i1γ1,n2i2γ2exp(ik1(rn1i1rni))×exp(ik2(rn2i2rni)+ik3(rn3i3rni)). (123)

Cluster decomposition for the Green’s function of electrons and phonons of disordered crystal can be obtained from Equations (95)–(100). The density of the electron and phonon states are presented as infinite series. Here, processes of scattering on clusters with different numbers of atoms are described by each term. It is shown that the contribution of the scattering processes of electrons and phonons in clusters decreases with increasing the number of atoms in the cluster by a small parameter

p(ε)=1rν|(n2i2)(n1i1),i,γtn1i1(ε)G˜(ε)tn2i2(ε)G˜(ε)0iγ,0iγ|, (124)

where r is the total number of energy bands included in the calculation.

We have shown previously [26,30,31,32] that this parameter remains small when many parameters of the system are changed, except possibly for narrow energy intervals near the band edges.

By neglecting the contribution of processes of electron scattering in clusters consisting of three or more atoms that are small by the above parameter in Equation (125) for the density of electronic states, we obtain:

ge(ε)=1vi,δ,σ,λ,mλiP0iλmλig0iδσλmλi(ε), (125)
g0iδσλmλi(ε)=1π Im {G˜+G˜ tλmλi0iG˜+(lj)(0i)λ,mλjPlj0iλmλj/λmλi×G˜ [tλmλjlj+T(2)λmλi 0i,λmλjlj]G˜}0iδσ,0iδσ, (126)
T(2)λmλi 0i,λmλjlj=[Itλmλi 0iG˜tλmλjljG˜]1×tλmλi 0iG˜tλmλjlj[I+G˜tλmλi 0i] (127)

where G˜=G˜aa+(ε).

Similarly averaging of the phonon Green’s function Guu(ε) yields the phononic density of states:

gph(ε)=1νi,α,λP0iλg0iαλ(ε), (128)
g0iαλ(ε)=1π 2ε2MiIm {G˜+G˜ tλ0iG˜+(lj)(0i)λPlj0iλ/λ ×G˜ [tλlj+T(2)λ 0i,λlj]G˜}0iα,0iα, (129)

where G˜=G˜uu(ε).

In Equation (127), Plj0iλmλj/λmλi is the conditional probability to find an atom of type λ′ at site (lj) for the atom with magnetic moment mλ′j, provided that the sites in the unit cell at the origin (0i) have an atom of type λ with a magnetic moment mλi. Here, tniλmλi is the value of the matrix element of a single-center operator for scattering in the case where an atom of type λ is located at site (ni) and has a magnetic moment mλi.

When the system is disordered, we need to consider a random arrangement of the disordered atomic sites. Hence, in Equation (129), the probability of an atom of type λ to be at site (0i) is given by

P0iλ=<c0iλ>, (130)

where cniλ is a discrete binary random number taking the values of 1 or 0, depending on whether an atom of type λ is at site (ni) or not, respectively (36). The joint probabilities in Equations (126), (127), (129), and (130) are defined by the following:

Plj0iλλ=P0iλPlj0iλ/λ=<cljλc0iλ>,P0iλmλi=P0iλP0imλi,Plj0iλmλj/λmλi=Plj0iλ/λPlj0imλj/mλiPlj0imλjmλi=P0imλiPlj0imλj/mλi=<cljmλjc0imλi>. (131)

The probabilities are determined by the interatomic pair correlations εlj0iBB, εlj0iμλjμλi via [30]:

Plj0iλ/λ=Pljλ+εlj0iBBP0iλ(δλBδλA)(δλBδλA),Plj0imλj/mλi=Pljmλj+εlj0iμλjμλiP0imλi(δmλj,μjδmλj,μj+)(δmλi,μiδmλi,μi+), (132)

where δ is the Kronecker delta function. Note that the interatomic pair correlations also satisfy

εlj0iBB=<(cljBcjB)(c0iBciB)>, εlj0iμλjμλi=<(cljμλjcjμλj)(c0iμλiciμλi)>. (133)

The notations P0imλi and Plj0imλj/mλi indicate the probabilities of the static fluctuations of the magnetization.

As an example, when we have a binary alloy, consisting of two sublattices, and two types of atoms A and B, we obtain

P0iA=xAν2νηa (134)

for the first sublattice and

P0iA=xA+ν1νηa (135)

for the second sublattice, with

P0iB=1P0iA. (136)

Here, ν = ν1 + ν2 is the total number of sublattice sites, xA, and xB = 1 − xA are the concentrations of the atomic components A and B in the alloy, and ηa is the parameter that measures the long-range atomic order.

The two values mλi=μλi+ and μλi represent the projections of the localized magnetic moment onto the z axis. The probability P0imλi is connected with the long-range magnetic parameter ηm via the expressions

P0iμλi+=xμλ+ν2νηm (137)

for sublattice 1 and

P0iμλi+=xμλ++ν1νηm (138)

for sublattice 2, with

P0iμλi=1P0iμλi+. (139)

Here, xμλ+ and xμλ=1xμλ+ are equal to the relative number of lattice sites with localized magnetic moment projections μλi+ and μλi, respectively.

For an ideally ordered crystal, the Green’s function in Equation (97) is:

G(ε)=limG˜(ε),σ(ε)0, (140)

where the Green’s function G˜(ε) is given by Formulas (95) and (96). The energies of the electrons and phonons of the crystal are determined from the equations for the poles of the Green’s functions:

detεδiiδγγH˜iγ,iγ(k,ε)=0, (141)
detε22MiδiiδααΦ˜iα,iα(k,ε)=0, (142)

where H˜iγ,iγ(k,ε), Φ˜iα,iα(k,ε) are given by Formulas (111) and (114).

6. Free Energy

The Gibbs free energy or, in other words, the thermodynamic potential of the system, satisfies [27]:

Ω=Θ ln Tr(eH/Θ). (143)

The Hamiltonian H is defined in Equation (1). To perform the trace, we need to sum over all of the band states, but we also need to take into account the disorder averaging. The latter is commonly handled via a configurational average [26]. Using Formulas (50) and (144), we represent the thermodynamic potential in the form:

Ω=δΦΘ Sc+Ωe(0)+Ωph(0)+Ω, (144)

where Ωe(0),Ωph(0) are the thermodynamic potentials for the electrons and the phonons in the field of the ionic cores, respectively. Ω is the component of the thermodynamic potential that is caused by the mutual scattering of electrons and phonons; it is defined by

Ω=Θ ln<σ(1/Θ)>0, (145)

with σ given in Equation (50) for the interaction picture.

In addition, Sc=<lnPc> is the configurational entropy, where Pc denotes the distribution function for atoms with a specific z-component of the magnetic moment on a given lattice site. The angular brackets denote the configurational averaging over different disorder configurations for a given density of disorder.

Next, we use the “integration over the coupling constant” method to simplify the results further. By replacing the interacting Hamiltonian Hint (defined in Equation (5)) by Hint(λ) = λHint, differentiating the expression for the piece of the thermodynamic potential Ω(λ) in Equation (146) with respect to λ and then integrating (with the boundary conditions Ω(0)=0, Ω(1)=Ω), we obtain the following after a long derivation:

Ω=1πνNIm01dλλdε[f(ε)××Tr(w(λ)+Σeph(ε,λ)+Σee(ε,λ))Gaa+(ε,λ)++12coth(ε2Θ)TrΔM1(λ)GPP(ε,λ)++(ΔΦ(λ)+Σphph(ε,λ))Guu(ε,λ)]. (146)

The contribution to the thermodynamic potential from the electrons (in the field of the ionic cores) is also simple to find. It is given by

Ωe(0)=Θln(1+e(μeε)/Θ) ge(0)(ε) dε. (147)

Similarly, the contribution to the thermodynamic potential from the phonons (in the field of the ionic cores) is given by

Ωph(0)=Θln(1eε/Θ) gph(0)(ε) dε. (148)

The values ge(0)(ε) and gph(0)(ε) in Equations (148) and (149) are given by Formulas (126)–(130), in which one should put: tλmλi0i=tλ0i=0,G˜(ε)=G0(ε) (61)–(65).

Finally, the configurational entropy can be represented as [26]:

Sc=[λ,mλi,niPniλmλilnPniλmλi+12λ,mλi,niλ,mλj,lj(ni)(lj)PniljλmλiλmλjlnPniljλmλiλmλjPniλmλiPljλmλj+] (149)

Ultimately, we are interested in determining the Helmholz free energy, F, as a function of the volume V,the temperature T, the number of electrons Ne, and the parameters of interatomic and magnetic correlations (εn1i1n2i2,η). The Helmholz free energy can be found directly from the thermodynamic potential. Namely, it satisfies F=Ω+μe<Ne>. The free energy per atom, can be approximated by [26]:

F=δΦΘSc+Ωe+Ωph+μe<Z>, (150)

where Ωe and Ωph are given by Equations (148) and (149), but with ge(0)(ε), gph(0)(ε) replaced by ge(ε), gph(ε) (see Equations (126)–(130)).The values of the parameters of the interatomic and magnetic correlations (εn1i1n2i2,η) are found from the condition for the minimum free energy F (151).

7. Electrical Conductivity

Assuming the system to be driven not too far from equilibrium, we are allowed then to make use of the linear response formalism of Kubo for the electrical conductivity tensor [33],

σαβ(ω)=01/Θ0eiωtδtJ˜β(0)J˜α(t+iτ)dτdt. (151)

In this equation, Jα is the current operator along the α spatial direction. The real part of the conductivity, called the optical conductivity, can then be represented in terms of the imaginary part of the retarded response function, or equivalently as

Reσαβ(ω)=i2ω[GrJαJβ(ω)GaJαJβ(ω)], (152)

in terms of the retarded and advanced response functions. The current operator is just the number operator for the electrons, multiplied by their velocity and the electric charge, and then summed over all states. It is compactly represented via

Jα(t)=eΨ+(ξ,t)vαΨ(ξ,t)dξ, (153)

where Ψ+(ξ,t) and Ψ(ξ,t) are the field operators for the creation and annihilation of electrons, respectively, να is the operator of the α component of the band velocity, and e is the electron charge. The integration over ξ sums over all states.

To get the retarded response function on the real frequency axis, we must analytically continue the thermal response functions. The thermal current–current response function is defined to be

GJαJβ(τ,τ)=e2NV1n1n2n3n4vαn4n2vβn3n1G(n1τ,n2τ,n3τ,n4τ), (154)

where V1 is the volume of the primitive unit cell, and the two-particle thermal Green’s function is given by the following time-ordered expectation value:

G(n1τ,n2τ,n3τ,n4τ)=Tτan1(τ)an2(τ)an2+(τ)an4+(τ)σ(1θ)σ(1θ)1,(n=niγ). (155)

The two-particle Green’s function from Equation (156) is described by the diagram in Figure 6.

Figure 6.

Figure 6

Diagrams for the two-particle Green’s function.

The numbers of Figure 6 correspond to point numbers, e.g., 1 corresponds to (n1i1γ1τ1).

Using the diagram technique for two-particle temperature Green’s function and neglecting the contributions of scattering processes on clusters of three or more sites for the conductivity tensor, we can get:

Reσαβ(ω)=e24πV1ε{dε1[f(ε1+ε)f(ε1)]s,s=+,(2δss1)γ,i{[vβK˜(ε1s,vα,ε1s+ε)]+λ,mλiP0iλmλiK˜(ε1s+ε,vβ,ε1s)(tλmλi0i(ε1s)K˜(ε1s,vα,ε1s+ε)tλmλi0i(ε1s+ε)+λ,mλiP0iλmλilj0i,λ,mλjPlj0iλmλj/λmλi[[K˜(ε1s+ε,vβ,ε1s)vαG˜(ε1s+ε)]×T(2)λmλi0i,λmλjlj(ε1s+ε)+[K˜(ε1s,vα,ε1s+ε)vβG˜(ε1s)]T(2)λ mλi0i,λmλjlj(ε1s)+K˜(ε1s+ε,vβ,ε1s)[(tλmλjlj(ε1s)K˜(ε1s,vα,ε1s+ε)tλmλi0i(ε1s+ε)+(tλmλi0i(ε1s)+tλmλjlj(ε1s))K˜(ε1s,vα,ε1s+ε)T(2)λ mλi0i,λmλjlj(ε1s+ε)+T(2)λmλjlj,λmλi0i(ε1s)K˜(ε1s,vα,ε1s+ε)tλmλi0i(ε1s+ε)+T(2)λmλjlj,λmλi0i(ε1s)K˜(ε1s,vα,ε1s+ε)T(2)λmλi0i,λmλjlj(ε1s+ε)+T(2)λmλjlj,λmλi0i(ε1s)K˜(ε1s,vα,ε1s+ε)T(2)λmλjlj,λmλi0i(ε1s+ε)]]}0iγ,0iγ+1Ndε1dε2f(ε1)f(ε2)ΔGαβII(ε1,ε2;ε)}, (156)

where

K˜(ε1s,vα,ε1s+ε)=G˜aa+(ε1s)vαG˜aa+(ε1s+ε),G˜aa+(ε1+)=G˜raa+(ε1),G˜aa+(ε1)=G˜aaa+(ε1)=(G˜raa+)*(ε1), (157)

And the two-particle interaction term denoted by ΔGII(ε1,ε2), is given by the equation:

ΔGαβII(ε1,ε2;ε)=i2πvαn4n2vβn3n1{[G˜rn1n6aa+(ε1)G˜an1n6aa+(ε1)]××[G˜rn2n5aa+(ε2)G˜an2n5aa+(ε2)][G˜an7n4aa+(ε2ε)G˜rn8n3aa+(ε1+ε)G˜rn7n4aa+(ε2ε)G˜an8n3aa+(ε1+ε)]+G˜an1n6aa+(ε1ε)[G˜rn2n5aa+(ε2)G˜an2n5aa+(ε2)]××G˜an7n4aa+(ε2ε)[G˜rn8n3aa+(ε1)G˜an8n3aa+(ε1)]G˜rn1n6aa+(ε1ε)××[G˜rn2n5aa+(ε2)G˜an2n5aa+(ε2)]G˜rn7n4aa+(ε2ε)[G˜rn8n3aa+(ε1)G˜an8n3aa+(ε1)]++[G˜an1n6aa+(ε1ε)G˜rn2n5aa+(ε2+ε)G˜rn1n6aa+(ε1ε)G˜an2n5aa+(ε2+ε)]××[G˜rn7n4aa+(ε2)G˜an7n4aa+(ε2)][G˜rn8n3aa+(ε1)G˜an8n3aa+(ε1)]++[G˜rn1n6aa+(ε1)G˜an1n6aa+(ε1)]G˜rn2n5aa+(ε2+ε)[G˜rn7n4aa+(ε2)G˜an7n4aa+(ε2)]×G˜rn8n3aa+(ε1+ε)[G˜rn1n6aa+(ε1)G˜an1n6aa+(ε1)]G˜an2n5aa+(ε2+ε)××[G˜rn7n4aa+(ε2)G˜an7n4aa+(ε2)]G˜an8n3aa+(ε1+ε)}Γ˜n5n8n6n7, (n=niγ) (158)

Summation over repeated indices in expression (159) is implied.

For the static conductivity tensor, we can get (ω→0):

σαβ=e24πV1{dε1fε1s,s=+,(2δss1)γ,i{[vβK˜(ε1s,vα,ε1s)]+λ,mλiP0iλmλiK˜(ε1s,vβ,ε1s)(tλmλi0i(ε1s)K˜(ε1s,vα,ε1s)tλmλi0i(ε1s)+λ,mλiP0iλmλilj0i,λ,mλjPlj0iλmλj/λmλi[[K˜(ε1s,vβ,ε1s)vαG˜(ε1s)]×T(2)λmλi0i,λmλjlj(ε1s)+[K˜(ε1s,vα,ε1s)vβG˜(ε1s)]T(2)λ mλi0i,λmλjlj(ε1s)+K˜(ε1s,vβ,ε1s)[(tλmλjlj(ε1s)K˜(ε1s,vα,ε1s)tλmλi0i(ε1s)+(tλmλi0i(ε1s)+tλmλjlj(ε1s))K˜(ε1s,vα,ε1s)T(2)λ mλi0i,λmλjlj(ε1s)+T(2)λmλjlj,λmλi0i(ε1s)K˜(ε1s,vα,ε1s)tλmλi0i(ε1s)+T(2)λmλjlj,λmλi0i(ε1s)K˜(ε1s,vα,ε1s)T(2)λmλi0i,λmλjlj(ε1s)+T(2)λmλjlj,λmλi0i(ε1s)K˜(ε1s,vα,ε1s)T(2)λmλjlj,λmλi0i(ε1s)]]}0iγ,0iγ} (159)

The electron velocity satisfies the conventional definition

vα(k)=1H0(1)(k)kα. (160)

When deriving expression (160), the last small term in the expression for electrical conductivity (157) is neglected.

The method developed in this work was applied in [28] to study the effect of an impurity on the energy spectrum and electrical conductivity of carbon nanotubes.

8. Energy Spectrum of Graphene with Adsorbed Potassium Atoms

To calculate the electron spectrum of graphene with adsorbed potassium atoms, we chose the wave functions of the 2s and 2p states of neutral noninteracting carbon atoms as the basis. In the calculation of the matrix elements of the Hamiltonian, we took three first coordination spheres. The energy spectrum of graphene was calculated for the temperature T = 0 K. In calculations, we neglect the renormalization of vertices of the mass operator of the electron–electron interaction. The dependence of the energy of an electron on the wave vector for graphene is calculated from the equation for Green’s function poles for the electron subsystem, defined in Equation (142).

In Figure 7a, we show the dependence of the electron energy ε in graphene with adsorbed potassium atoms on the wave vector k. Vector k is directed from the Brillouin zone center (point Γ) to the Dirac point (point K).

Figure 7.

Figure 7

Electronic spectrum of graphene with impurities. The dependence of the energy ε on the wave vector k in the region of the slit is shown in (a). (b) gap in the energy spectrum of graphene arises.

In Figure 7, the structural periodic distance from a potassium atom to a carbon atom is 0.28 nm. It is seen from Figure 7 that, at the ordered arrangement of potassium atoms, a gap in the energy spectrum of graphene arises. Its value depends on the concentration of adsorbed potassium atoms, their location in the unit cell, and the distance to carbon atoms. We established that, at the potassium concentration such that the unit cell includes two carbon atoms and one potassium atom, the latter being placed on the graphene surface above a carbon atom at a distance of 0.286 nm, the energy gap is ~0.25 eV (see Figure 7b). A more complex dependence of the electron energy on the wave vector in the region of the energy gap in comparison with that previously investigated in [34,35,36] in a simple two-band model is due to the effect of band hybridization. The location of the Fermi level in the energy spectrum depends on the potassium concentration and is in the energy interval 0.36 RyεFRy0.36. Such a situation is realized if graphene is placed on a potassium support.

9. Conclusions

A novel approach to the description of the electronic spectrum, the thermodynamic potential, and the electrical conductivity of disordered crystals, based on the Hamiltonian of electrons and phonons, constitutes the main issue of the present work. Expressions for Green’s functions, thermodynamic potential, and electrical conductivity are derived using the diagram method. Equations are obtained for the vertex parts of the mass operators of electron–electron and electron–phonon interactions. A system of exact equations is obtained for the spectrum of elementary excitations in a crystal. This makes it possible to perform numerical calculations of the energy spectrum and the properties of the system with a predetermined accuracy. In contrast to other approaches, in which electron correlations are taken into account only in the limiting cases of an infinitely large and infinitesimal electron density, in this method, electron correlations are described in the general case of an arbitrary density.

It was found that a gap appears in the energy spectrum of graphene with an ordered arrangement of potassium atoms. Its value depends on the concentration of adsorbed potassium atoms, their location in the unit cell, and the distance to carbon atoms. It was found that at such a concentration of potassium, the unit cell includes two carbon atoms and one potassium atom, the latter being located on the graphene surface above the carbon atom at a distance of 0.286 nm, and the band gap is ~0.25 eV. Such a situation is realized if graphene is placed on a potassium support. A more complex dependence of the electron energy on the wave vector in the region of the energy gap in comparison with that previously investigated in [34,35,36] in a simple two-band model is due to the effect of band hybridization.

Author Contributions

S.P.R. did the calculations.; I.G.V. constructed and optimized the computational models; S.P.K. responsible of methodology and conceptualization; S.B. supervised the work and did main calculation. All authors contributed to manuscript preparation. All authors have read and agreed to the published version of the manuscript.

Funding

S.K. acknowledges support by the National Academy of Sciences of Ukraine (Project No. 0116U002067).

Institutional Review Board Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

Data are available by the Corresponding Author upon reasonable request.

Conflicts of Interest

The authors declare no conflict of interest.

Footnotes

Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Data Availability Statement

Data are available by the Corresponding Author upon reasonable request.


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