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. 2018 Sep 13;8(56):31984. doi: 10.1039/c8ra90075b

Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

Y-R Jo 1, S-H Myeong 1, B-J Kim 1,
PMCID: PMC9086293  PMID: 35547529

Abstract

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.


The authors regret that one of the funders was omitted from the acknowledgements in the original article. The full acknowledgements should read: “This work was supported by the Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1402-10 and the National Research Foundation of Korea (NRF) under Grant NRF2013S1A2A2035468.”

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Supplementary Material


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