Skip to main content
. 2022 Mar 16;8(3):e09120. doi: 10.1016/j.heliyon.2022.e09120

Table 2.

Interface parameters used in this simulation.

Parameters ZnSe/Sb2Se3 interface Sb2Se3/AgInTe2 interface
Defect type Neutral Neutral
Capture cross section for electrons [cm2] 10−19 10−19
Capture cross section for holes [cm2] 10−19 10−19
Energetic distribution Single Single
Reference for defect energy level, Et Above the highest EV Above the highest EV
Energy with respect to reference (eV) 0.6 0.6
Total defects (cm−2) 1010 1010