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. 2022 Jul 29;15(1):25–35. doi: 10.1007/s12633-022-01994-z

Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors

Prashanth Kumar 1,✉, Papanasam Esakki 1, Lucky Agarwal 1, PeddaKrishna 2, Sumit Kale 3, Brinda Bhowmick 4
PMCID: PMC9334533

Abstract

In this review, we explored the modern development of schottky field effect transistor (SK FET) structures and the improvement of sensitivity of nanowire sensors using dielectric modulation. Here, the recent developments compared with the conventional schottky FET sensor, and modified conventional configuration have improved sensitivity and faster responses controlled by dielectric modulation and changing the barrier height. The change in sensitivity- with the current optimization has been considered for dissimilar gate, and drain voltage. The dielectric modulation can advance the finding limits, sensitivity, and reaction time of the novel structures in dissimilar applications, such as U-V finding, gas and chemical/ biosensing. In addition, the efficiency and doped channel have been deliberately studied under dissimilar biomolecule model specifications. This article reviews a recent study on emerging future generation SK FET biosensors with their sensitivity performance and the effect of their metal and channel contact is presented.

Keywords: Biosensor, Dielectric, Sensitivity, Tunnelling, Hetero-structure, Gate dielectric

Author contributions

All the authors are involved in the review on the schottky barrier FET device.

Data Availability

There is no other data and material associated with this manuscript.

The author declares that he has no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Declarations

Conflict of Interest

The author declares that there is no conflict of interest.

Consent to participate

Not applicable.

Consent for Publication

Not applicable as the manuscript does not contain any data from an individual.

Footnotes

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

References

  • 1.Cheng S, Hideshima S, Kuroiwa S, Nakanishi T, Osaka T. Label-free detection of tumor markers using field effect transistor (FET)-based biosensors for lung cancer diagnosis. Sens Actuators, B Chem. 2015;212:329–334. doi: 10.1016/j.snb.2015.02.038. [DOI] [Google Scholar]
  • 2.Kumar P, Bhowmick B (2020) Source-drain junction engineering Schottky barrier MOSFETs and their mixed mode application. Silicon 12(4):821–830. 10.1007/s12633-019-00170-0 Silicon, 2019
  • 3.Wadhera T, Kakkar D, Wadhwa G, Raj B. Recent Advances and Progress in Development of the Field Effect Transistor Biosensor: A Review. J Electron Mater. 2019;48(12):7635–7646. doi: 10.1007/s11664-019-07705-6. [DOI] [Google Scholar]
  • 4.Tran T-T, Mulchandani A. Carbon nanotubes and grapheme nano field-effect transistor-based biosensors. TrAC Trends Anal Chem. 2016;79:222–232. doi: 10.1016/j.trac.2015.12.002. [DOI] [Google Scholar]
  • 5.Sang S, Wang Y, Feng Q, Wei Y, Ji J, Zhang W. Progress of new label-free techniques for biosensors: A review. Crit Rev Biotechnol. 2016;36(3):465–481. doi: 10.3109/07388551.2014.991270. [DOI] [PubMed] [Google Scholar]
  • 6.Teklemariam A Demeke, Samaddar M, Alharbi MG, Al-Hindi RR, Bhunia AK (2020) Biosensor and molecular-based methods for the detection of human coronaviruses: A review. Mol Cell Probes 54:101662. 10.1016/j.mcp.2020.101662 [DOI] [PMC free article] [PubMed]
  • 7.Syedmoradi L, Ahmadi A, Norton ML, Omidfar K. A review on nanomaterial-based field effect transistor technology for biomarker detection. Microchim Acta. 2019;186(11):739. doi: 10.1007/s00604-019-3850-6. [DOI] [PubMed] [Google Scholar]
  • 8.Kumar A, Tripathi MM, Chaujar R. Sub-30nm In2O5Sn gate electrode recessed channel MOSFET: A biosensor for early stage diagnostics. Vacuum. 2019;164:46–52. doi: 10.1016/j.vacuum.2019.02.054. [DOI] [Google Scholar]
  • 9.Buvaneswari B, Balamurugan NB. 2D analytical modeling and simulation of dual material DG MOSFET for biosensing application. AEU-Int J Electron C. 2019;99:193–200. doi: 10.1016/j.aeue.2018.11.039. [DOI] [Google Scholar]
  • 10.Sadighbayan D, Hasanzadeh M, Ghafar-Zadeh E. Biosensing based on field-effect transistors (FET): Recent progress and challenges. TrAC, Trends Anal Chem. 2020;133:116067. doi: 10.1016/j.trac.2020.116067. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 11.Park J, Nguyen HH, Woubit A, Kim M. Applications of Field-Effect Transistor (FET)-Type Biosensors. Appl Sci Converg Technol. 2014;23(2):61–71. doi: 10.5757/ASCT.2014.23.2.61. [DOI] [Google Scholar]
  • 12.Chanda M, Dey P, De S, Sarkar CK. Novel charge plasma based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection. Superlattices Microstruct. 2015;86:446–455. doi: 10.1016/j.spmi.2015.08.013. [DOI] [Google Scholar]
  • 13.Narang R, Reddy KVS, Saxena M, Gupta RS, Gupta M. A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis. IEEE Trans Electron Devices. 2012;59(10):2809–2817. doi: 10.1109/TED.2012.2208115. [DOI] [Google Scholar]
  • 14.Narang R, Saxena M, Gupta RS, Gupta M. Dielectric Modulated Tunnel Field-Effect Transistor—A Biomolecule Sensor. IEEE Electron Device Lett. 2012;33(2):266–268. doi: 10.1109/LED.2011.2174024. [DOI] [Google Scholar]
  • 15.Kumar P, Bhowmick B. 2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET. J Comput Electron. 2017;16(3):658–665. doi: 10.1007/s10825-017-1011-x. [DOI] [Google Scholar]
  • 16.Reddy NN, Panda DK. A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity. Silicon. 2021;13(9):3085–3100. doi: 10.1007/s12633-020-00657-1. [DOI] [Google Scholar]
  • 17.Singh R, Kaim S, MedhaShree R, Kumar A, Kale S. Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation. Silicon. 2021 doi: 10.1007/s12633-021-01191-4. [DOI] [Google Scholar]
  • 18.Guin S, Chattopadhyay A, Karmakar A, Mallik A. Impact of a pocket doping on the device performance of a schottky tunneling field-effect transistor. IEEE Trans Electron Devices. 2014;61(7):2515–2522. doi: 10.1109/TED.2014.2325068. [DOI] [Google Scholar]
  • 19.Guin S, Chattopadhyay A, Karmakar A, Mallik A (2013) Influence of a Pocket Doping in a Schottky Tunneling FET. IEEE Int Future Electron Devices 28–29. 10.1109/IMFEDK.2013.6602225
  • 20.Yamamoto K, Okamoto H, Wang D, Nakashima H. Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction. Mater Sci Semicond Process. 2017;70:283–287. doi: 10.1016/j.mssp.2016.09.024. [DOI] [Google Scholar]
  • 21.Kim HW, Kim JP, Kim SW, Sun MC, Kim G, Kim JH, Park E, Kim H and Park BG (2014) Schottky barrier tunnel field-effect transistor using spacer technique. JSTS: Journal of Semiconductor Technology and Science, 14(5):572–578. 10.5573/JSTS.2014.14.5.572
  • 22.Ghosh P, Bhowmick B. Effect of Temperature on Reliability Issues of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET) Silicon. 2020;12(5):1137–1144. doi: 10.1007/s12633-019-00206-5. [DOI] [Google Scholar]
  • 23.Kumar P, Bhowmick B (2018) Comparative Analysis of Hetero Gate Dielectric Hetero Structure Tunnel FET and Schottky Barrier FET with n+ Pocket Doping for Suppression of Ambipolar Conduction and Improved RF/Linearity. J Nanoelectron Optoelectron 13:11
  • 24.Vinod A, Kumar P, Bhowmick B (2019) Impact of ferroelectric on the electrical characteristics of silicon–germanium based heterojunction Schottky barrier FET,”AEU - International Journal of Electronics and Communications, 107:257–263. 10.1016/j.aeue.2019.05.030
  • 25.Kumar P, Vinod A, Dharavath K, Bhowmick B. Analysis and Simulation of Schottky Tunneling Using Schottky Barrier FET with 2-D Analytical Modeling. Silicon. 2021 doi: 10.1007/s12633-020-00879-3. [DOI] [Google Scholar]
  • 26.Latha NKH, Kale S. Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor. Silicon. 2020;12(11):2673–2679. doi: 10.1007/s12633-019-00363-7. [DOI] [Google Scholar]
  • 27.Biswas A, Rajan C, Samajdar DP. Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors. Silicon. 2021 doi: 10.1007/s12633-021-01461-1. [DOI] [Google Scholar]
  • 28.Ronkainen NJ, Halsall HB, Heineman WR. Electrochemical biosensors. Chem Soc Rev. 2010;39(5):1747–1763. doi: 10.1039/b714449k. [DOI] [PubMed] [Google Scholar]
  • 29.Scheller FW, Wollenberger U, Warsinke A, Lisdat F. Research and development in biosensors. Curr Opin Biotechnol. 2001;12(1):35–40. doi: 10.1016/S0958-1669(00)00169-5. [DOI] [PubMed] [Google Scholar]
  • 30.Kumar P, Arif Wasim, Bhowmick B (2016) Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device. Silicon 12:811–820 10.1007/s12633-016-9534-5 (Impact Factor : 0.704).SCI ISSN1876–9918
  • 31.Chen Y, Liu J, Yang Z, Wilkinson JS, Zhou X (2019) Optical biosensors based on refractometric sensing schemes: A review. Biosens Bioelectron 144:111693. 10.1016/j.bios.2019.111693 [DOI] [PubMed]
  • 32.Alvarez M, Lechuga LM. Microcantilever-based platforms as biosensing tools. Analyst. 2010;135(5):827–836. doi: 10.1039/b908503n. [DOI] [PubMed] [Google Scholar]
  • 33.Grieshaber D, MacKenzie R, Vörös J, Reimhult E (2008) Electrochemical Biosensors - Sensor Principles and Architectures. Sensors (Basel) 8(3):1400–1458. 10.3390/s80314000 [DOI] [PMC free article] [PubMed]
  • 34.Thévenot DR, Toth K, Durst RA, Wilson GS. Electrochemical biosensors: Recommended definitions and classification. Biosens Bioelectron. 2001;16(1–2):121–131. doi: 10.1016/S0956-5663(01)00115-4. [DOI] [PubMed] [Google Scholar]
  • 35.Falina S, Syamsul M, Rhaffor NA, Sal Hamid S, Mohamed Zain KA, Abd Manaf A, Kawarada H. Ten years progress of electrical detection of heavy metal ions (hmis) using various Field-Effect Transistor (FET) Nanosensors: a review. Biosensors. 2021;11:478. doi: 10.3390/bios11120478. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 36.Ramos-Carrazco A, Gallardo-Cubedo JA, Vera-Marquina A, et al. Characterization of ZnO films grown by chemical vapor deposition as active layer in Pseudo-MOSFET. J Electron Mater. 2021;50:5196–5208. doi: 10.1007/s11664-021-09038-9. [DOI] [Google Scholar]
  • 37.Hierlemann A, Brand O, Hagleitner C, Baltes H. Microfabrication techniques for chemical/biosensors. Proc IEEE. 2003;91(6):839–863. doi: 10.1109/JPROC.2003.813583. [DOI] [Google Scholar]
  • 38.Rabbani S, Brishbhan P (2011) Cantilever embedded MOSFET for bio-sensing 2011 24th Canadian Conference on Electrical and Computer Engineering (CCECE) pp. 000489-000492. 10.1109/CCECE.2011.6030498
  • 39.Namrata M, Suman L (2020) Tripathi a review on performance comparison of advanced MOSFET structures below 45 nm technology node. J Semicond 41, 061401
  • 40.Pan Y, et al. Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate. IEEE J Electron Devices Soc. 2019;7:483–488. doi: 10.1109/JEDS.2019.2910271. [DOI] [Google Scholar]
  • 41.Zhang Q, et al. (2019) Si Nanowire Biosensors Using a FinFET Fabrication Process for Real Time Monitoring Cellular Ion Actitivies. Tech Dig - Int Electron Devices Meet IEDM 2018-Decem(l):29.6.1–29.6.4
  • 42.Lin HC, et al. Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility. Sci Rep. 2015;5(April):1–11. doi: 10.1038/srep10490. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 43.Baptista A, Silva F, Porteiro J, Míguez J, Pinto G (2018) Sputtering physical vapour deposition (PVD) coatings: A critical review on process improvement andmarket trend demands. Coatings 8(11). 10.3390/coatings8110402www.mdpi.com/journal/coatings
  • 44.Kumar P, Bhowmick B. 2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET. Superlattices Microstruct. 2017;109:805–814. doi: 10.1016/j.spmi.2017.06.001. [DOI] [Google Scholar]
  • 45.Kumar and B. Bhowmick, P (2017) A physics based threshold voltage model for hetero - dielectric dual material gate schottky barrier MOSFET. Int J Numer Model Electron Netw Devices Fields 31(5) 
  • 46.Liow T, et al. Strained n-channel FinFETs featuring in Situ Doped Silicon-Carbon (Si1−yCy) source and drain stressors with high carbon content. In IEEE Trans Electron Dev. 2008;55(9):2475–2483. doi: 10.1109/TED.2008.928025. [DOI] [Google Scholar]
  • 47.Chong C, Liu H, Wang S, et al. Simulation and performance analysis of dielectric modulated dual source trench gate TFET biosensor. Nanoscale Res Lett. 2021;16:34. doi: 10.1186/s11671-021-03486-2. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 48.Wu Y, Kakushima K, Takahashi Y (2017) Formation of magnesium silicide for source material in Si based tunnel FET by annealing of Mg/Si thin film multi-stacks. 17th Int Workshop Junction Technol pp. 83–84. 10.23919/IWJT.2017.7966522
  • 49.Singh D, Pandey S, Nigam K, Sharma D, Yadav DS, Kondekar P. A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection. IEEE Trans Electron Devices. 2017;64(1):271–278. doi: 10.1109/TED.2016.2622403. [DOI] [Google Scholar]
  • 50.Gao A, Lu N, Wang Y, Li T. Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics. Sci Rep. 2016;6(February):1–9. doi: 10.1038/srep22554. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 51.Saravanan M, Parthasarathy E (2021) A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications. Microelectronics J 114(May):105102 10.1016/j.mejo.2021.105102
  • 52.Takaki R, Takemoto H, Fujikawa S, Toyoki K. Fabrication of nanofins of TiO2 and other metal oxides via the surface sol-gel process and selective dry etching. Colloids Surfaces A Physicochem Eng Asp. 2008;321(1–3):227–232. doi: 10.1016/j.colsurfa.2007.11.040. [DOI] [Google Scholar]
  • 53.Pregl S, et al. Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output. Nano Res. 2013;6(6):381–388. doi: 10.1007/s12274-013-0315-9. [DOI] [Google Scholar]
  • 54.Kumar P, Bhowmick B (2018) Suppression of Ambipolar Conduction and Investigation of RF Performance Characteristics of Gate Drain Underlap SiGe Schottky Barrier Field Effect Transistor. Micro Nano Lett 13(5):626–630. 10.1049/mnl.2017.0895
  • 55.Rajamohanan B, et al. 0.5 V Supply Voltage Operation of In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 Tunnel FET. IEEE Electron Device Lett. 2015;36(1):20–22. doi: 10.1109/LED.2014.2368147. [DOI] [Google Scholar]
  • 56.Liu Y, et al. (2007) Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses. IEEE Electron Device Lett 28(6):517–519. 10.1109/LED.2007.896898
  • 57.Singh S, Sinha R, Kondekar PN. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET. Superlattices Microstruct. 2016;93:40–49. doi: 10.1016/j.spmi.2016.02.039. [DOI] [Google Scholar]
  • 58.Alabsi SS, Ahmed AY, Dennis JO, Khir MHM, Algamili AS. A review of carbon nanotubes field effect-based biosensors in IEEE. Access. 2020;8:69509–69521. doi: 10.1109/ACCESS.2020.2987204. [DOI] [Google Scholar]
  • 59.Singh S, Sinha R. Pravin Neminath Kondekar, "Impact of PZT gate-stack induced negative capacitance on analogue/RF figures-of-merits of electrostatically-doped ferroelectric Schottky-barrier tunnel FET. IET Circ Devices Syst. 2019;13(4):435–441. doi: 10.1049/iet-cds.2018.5276. [DOI] [Google Scholar]
  • 60.Sangeeta S (2019) Sensitivity and transient behaviour analysis of electrostatically doped double pocket ferroelectric schottky barrier tunnel field effect transistor using parametric sweep optimization. 10.1166/jno.2019.2591
  • 61.Kanungo S, Chattopadhyay S, Gupta PS, Sinha K, Rahaman H. Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors. IEEE Trans Electron Devices. 2016;63(6):2589–2596. doi: 10.1109/TED.2016.2556081. [DOI] [Google Scholar]
  • 62.Hafiz SA, Iltesha, Ehteshamuddin M, Loan SA (2019) Dielectrically Modulated Source-Engineered Charge-Plasma-Based Schottky-FET as a Label-Free Biosensor. IEEE Trans Electron Devices 66(4):1905–1910. 10.1109/TED.2019.2896695
  • 63.Chen  S, Liu H, Wang S, Han T, Li W, Wang X (2019) A novel Ge based overlapping gate dopingless tunnel FET with high performance. 10.7567/1347-4065/ab3f00
  • 64.Nigam K, Kondekar P, Chandan BV et al (2021) Performance and analysis of stack junctionless tunnel field effect transistor. Silicon. 10.1007/s12633-021-00958z
  • 65.Nigam K, Pandey S, Kondekar PN, Sharma D, Kumar PP (2017) A barrier controlled charge plasma-based TFET with gate engineering for ambipolar suppression and rf/linearity performance improvement. In IEEE Transactions on Electron Devices, vol. 64(6):2751–2757. 10.1109/TED.2017.2693679
  • 66.Singh NK, Raman A, Singh S, Kumar N. A novel high mobility In1-xGaxAs cylindrical-gate-nanowire FET for gas sensing application with enhanced sensitivity. Superlattices Microstruct. 2017;111:518–528. doi: 10.1016/j.spmi.2017.07.001. [DOI] [Google Scholar]
  • 67.Li P, Zhang D, Sun Y, Chang H, Liu J, Yin N (2016) Towards intrinsic MoS2 devices for high performance arsenite sensing. Appl Phys Lett 109(6)
  • 68.Madan J, Pandey R, Sharma R, Chaujar R. Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET. Appl Phys A Mater Sci Process. 2019;125(9):1–7. doi: 10.1007/s00339-019-2900-6. [DOI] [Google Scholar]
  • 69.Sharma P, Madan J, Pandey R, Sharma R. RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach. J Electron Mater. 2021;50(1):138–154. doi: 10.1007/s11664-020-08538-4. [DOI] [Google Scholar]
  • 70.Jhaveri R, Nagavarapu V, Woo JCS. Asymmetric Schottky Tunneling Source SOI MOSFET Design for Mixed-Mode Applications. IEEE Trans Electron Devices. 2009;56:93–99. doi: 10.1109/TED.2008.2008161. [DOI] [Google Scholar]
  • 71.Sung DJ, Koo J. A review of BioFET’s basic principles and materials for biomedical applications. Biomed Eng Lett. 2021;11:85–96. doi: 10.1007/s13534-021-00187-8. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 72.Balaji Y, et al. MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts. Adv Funct Mater. 2020;30(4):1–10. doi: 10.1002/adfm.201905970. [DOI] [Google Scholar]
  • 73.Bagga N, Kumar A, Bhattacharjee A, Dasgupta S. Performance Evaluation of a Novel GAA Schottky Junction (GAASJ) TFET with Heavily Doped Pocket. Superlattices Microstruct. 2017;109:545–552. doi: 10.1016/j.spmi.2017.05.040. [DOI] [Google Scholar]
  • 74.Kumar H, Singh S, Priyadarshani KN (2021) Electrostatically Doped Schottky barrier tunnel field effect transistor. Int J Electron Lett 10.1080/21681724.2021.1941282
  • 75.Glassner S, Zeiner C, Periwal P, Baron T, Bertagnolli E, Lugstein A. Multimode silicon nanowire transistors. Nano Lett. 2014;14(11):6699–6703. doi: 10.1021/nl503476t. [DOI] [PMC free article] [PubMed] [Google Scholar]
  • 76.Huang Q et al (2014) Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective. IEEE Int Electron Devices Meeting pp. 13.3.1–13.3.4. 10.1109/IEDM.2014.7047044
  • 77.Singh S, Kondekar PNS, Arun P (2017) Investigation of analog/radiofrequency figures-of-merits of charge plasma schottky barrier tunnel field effect transistor. 10.1166/jno.2017.2025
  • 78.Kaur P, Buttar AS, Raj B. A comprehensive Analysis of Nanoscale Transistor Based Biosensor: A Review. Indian J Pure Appl Phys. 2021;59:15. [Google Scholar]
  • 79.Kumar N, Raman A. Low voltage charge-plasma based dopingless Tunnel Field Effect Transistor: analysis and optimization. Microsyst Technol. 2020;26(4):1343–1350. doi: 10.1007/s00542-019-04666-y. [DOI] [Google Scholar]
  • 80.Shin JK, Kim DS, Park HJ, Lim G. Detection of DNA and protein molecules using an FET-type biosensor with gold as a gate metal. Electroanalysis. 2004;16(22):1912–1918. doi: 10.1002/elan.200403080. [DOI] [Google Scholar]
  • 81.Papavassiliou AG (1995) Chemical nucleases as probes for studying DNA-protein interactions. Biochem J 305(2):345–357 10.1042/2Fbj3050345. [DOI] [PMC free article] [PubMed]
  • 82.Vimala P, Krishna LL, Sharma SS . TFET Biosensor simulation and analysis for various biomolecules. Silicon. 2022 doi: 10.1007/s12633-021-01570-x. [DOI] [Google Scholar]
  • 83.Singh R, Kaim S, MedhaShree R, et al. Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation. Silicon. 2021 doi: 10.1007/s12633-021-01191-4. [DOI] [Google Scholar]
  • 84.Zörgiebel FM, Pregl S, Römhildt L, et al. Schottky barrier-based silicon nanowire pH sensor with live sensitivity control. Nano Res. 2014;7:263–271. doi: 10.1007/s12274-013-0393-8. [DOI] [Google Scholar]
  • 85.Kumar P. Performance Analysis of Double Gate Dielectric Modulation in Schottky FET as Biomolecule Sensor. Silicon. 2021 doi: 10.1007/s12633-021-01197-y. [DOI] [Google Scholar]
  • 86.Latha NKH, Kale S. Dielectric modulated Schottky barrier TFET for the application as label-free biosensor. Silicon. 2020;12:2673–2679. doi: 10.1007/s12633-019-00363-7. [DOI] [Google Scholar]
  • 87.Shin K, Lee K, Park J, Kang JY, Chui CO (2010) Schottky contacted nanowire field-effect sensing device with intrinsic amplification. In IEEE Electron Dev Lett 31(11):1317–1319. 10.1109/LED.2010.2070833
  • 88.Ranwa S, Kumar M, Singh J, et al. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications. J Appl Phys. 2015;118:034509. doi: 10.1063/1.4926953. [DOI] [Google Scholar]
  • 89.Chen H, Choo TK, Huang J, et al. Label-free electronic detection of interleukin-6 using horizontally aligned carbon nanotubes. Mater Des. 2016;90:852–857. doi: 10.1016/j.matdes.2015.11.029. [DOI] [Google Scholar]
  • 90.Heller I, Janssens AM, Männik J, et al. Identifying the Mechanism of Biosensing with Carbon Nanotube Transistors. Nano Lett. 2008;8:591–595. doi: 10.1021/nl072996i. [DOI] [PubMed] [Google Scholar]
  • 91.Kale S, Kondekar PN (2017) Design and Investigation of Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With NiSi Source/Drain. IEEE Trans Electron Devices 64(11):4400–4407
  • 92.Kale S (2020) Performance improvement and analysis of PtSi Schottky barrier p-MOSFET based on charge plasma concept for low power applications. Silicon 12:479–485. 10.1007/s12633-019-00161-1
  • 93.Kale S, Kondekar PN (2018) Charge Plasma Based Source/Drain Engineered Schottky Barrier MOSFET: Ambipolar Suppression and Improvement of the RF Performance. Superlattices Microstruct, Elsevier 113:799–809
  • 94.Kale S, Kondekar PN (2016) Ferroelectric Schottky Barrier Tunnel FET with Gate-Drain Underlap: Proposal and Investigation. Superlattices Microstruct, Elsevier 89:225-230
  • 95.Inaba M, et al. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate. Appl Phys Lett. 2016;109:033503. doi: 10.1063/1.4958889. [DOI] [Google Scholar]
  • 96.Kale S, Chandu MS. Dual metal gate dielectric engineered dopant segregated Schottky Barrier Mosfet with reduction in ambipolar current. Silicon. 2022;14:935–941. doi: 10.1007/s12633-020-00921-4. [DOI] [Google Scholar]
  • 97.Kalra S, Kumar MJ, Dhawan A. Reconfigurable FET Biosensor for a Wide Detection Range and Electrostatically Tunable Sensing Response. IEEE Sensors J. 2020;20:2261–2269. doi: 10.1109/JSEN.2019.2952333. [DOI] [Google Scholar]
  • 98.Singh S, Kondekar PN, Jaiswal NK. Label-free biosensor using nanogap embedded dielectric modulated schottky tunneling source impact ionization MOS. Microelectron Eng. 2016;149:129–134. doi: 10.1016/j.mee.2015.10.005. [DOI] [Google Scholar]
  • 99.Park W-J, Hahm S-H. Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors. J Sensor Sci Technol. 2017;26:79–84. doi: 10.5369/JSST.2017.26.2.79. [DOI] [Google Scholar]
  • 100.Raman A, Kakkar D, Bansal M, Kumar N. Design and performance analysis of GAA Schottky barrier-gate stack-dopingless nanowire FET for phosphine gas detection. Appl Phys A. 2019;125:787. doi: 10.1007/s00339-019-3066-y. [DOI] [Google Scholar]
  • 101.Kalra S, Kumar MJ, Dhawan A. Schottky Barrier FET Biosensor for Dual Polarity Detection: A Simulation Study. IEEE Electron Device Lett. 2017;38:1594–1597. doi: 10.1109/LED.2017.2756922. [DOI] [Google Scholar]
  • 102.Kale S, Latha NKH, Bramhane LK. Design and Proposal of Double Pocket Schottky Barrier TFET with Dielectric Modulation for Biosensors Applications. Silicon. 2022 doi: 10.1007/s12633-022-01840-2. [DOI] [Google Scholar]
  • 103.Bramhane LK, Kadbe PK, Patil BH, Chede SD, Lande SB. Dual Dielectrically Modulated Electrostatically Doped Tunnel-FET for Biosensing Applications. Int J Emerg Technol. 2019;10(4):153–159. [Google Scholar]
  • 104.Bramhane L, Salankar S, Gaikwad M, et al. Impact of Work Function Engineering in Charge Plasma Based Bipolar Devices. Silicon. 2022;14:3993–3997. doi: 10.1007/s12633-021-01146-9. [DOI] [Google Scholar]

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