(a) Etched SU-8 thickness as a function of RIE-ICP etch time in RF power 50 W, ICP power 300 W, 50 sccm O2 flow, 10 mT chamber pressure in O2 plasma with He backed substrate cooling at 10 torr (b) Mean, and RMS surface roughness measured using AFM (c) SU-8 thickness as a function of SU-8 concentration diluted in CPG thinner, spin-coated at 6000 RPM after hardbake at 100°C for 30 mins. Dashed lines in the figures indicate linear fits to the data.